Silicon Power Transistors DESCRIPTION TO-220Fa package speed swit
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Silicon Power Transistors
DESCRIPTION TO-220Fa package speed switching VCEO APPLICATIONS high breakdown voltage ,high-speed switching applications
PINNING DESCRIPTION Base Collector Emitter
2SC4559
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=10mA IB=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A VCE=5V IC=3A VCE=5V IC=0.5A VCE=10V;f=1MHz
2SC4559
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=3A; IB1=0.6A IB2=-1.2A;VCC=150V
Silicon Power Transistors
PACKAGE OUTLINE
2SC4559
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SC4559
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