Silicon Power Transistors DESCRIPTION TO-3 package type 2N6031 co

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Silicon Power Transistors DESCRIPTION TO-3 package type 2N6031 co

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Silicon Power Transistors
DESCRIPTION TO-3 package type 2N6031 collector-emitter sustaining voltage current gain@IC=8A collector saturation voltage APPLICATIONS high power audio amplifier high voltage switching regulator circuits applications
PINNING Base Emitter DESCRIPTION
2N5631
Fig.1 simplified outline (TO-3) symbol Collector
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A VCE=2V VCB=ratedVCBO; IE=0 VCE=70V; IB=0 VCE=ratedVCB ;VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=8A VCE=2V IC=16A VCE=2V IE=0 VCB=10V ;f=0.1MHz IC=1A VCE=20V ;f=0.5MHz TYP.
2N5631
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICBO ICEO ICEX IEBO hFE-1 hFE-2
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N5631
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors DESCRIPTION TO-3 package type 2N6031 co

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