Silicon Power Transistors DESCRIPTION TO-220Fa package Wide area
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Silicon Power Transistors
DESCRIPTION TO-220Fa package Wide area safe operation (ASO) switching collector base voltage VCBO APPLICATIONS high breakdown voltage highspeed switching applications
PINNING DESCRIPTION Base Collector Emitter
2SC4004
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 Open emitter Open base Open collector CONDITIONS VALUE UNIT
Silicon Power Transistors
2SC4004
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=1mA IB=0 IC=0.2A ;IB=0.04A IC=0.2A; IB=0.04A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.05A VCE=5V IC=0.5A VCE=5V IC=0.05A; VCE=10V;f=1MHz TYP. UNIT SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
Switching times Turn-on time Storage time Fall time IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V
Silicon Power Transistors
2SC4004
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15
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