Silicon Power Transistors DESCRIPTION TO-220Fa package speed swit
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Silicon Power Transistors
DESCRIPTION TO-220Fa package speed switching VCBO area safe operation APPLICATIONS high breakdown voltate ,high-speed switching applications
PINNING DESCRIPTION Base Collector Emitter
2SC3970 2SC3970A
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER 2SC3970 Collector-base voltage 2SC3970A Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature -55~150 Open base Open collector Open emitter CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3970 2SC3970A CONDITIONS IC=10mA IB=0 IC=0.6A; IB=0.17A IC=0.6A; IB=0.17A VCB=800V; IE=0
2SC3970 2SC3970A
SYMBOL V(BR)CEO VCEsat VBEsat
TYP.
UNIT
ICBO
Collector cut-off current
VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A VCE=5V IC=0.6A VCE=5V IC=0.1A VCE=10V;f=1MHz
IEBO hFE-1 hFE-2
Emitter cut-off current current gain current gain Transition frequency
Switching times Turn-on time Storage time Fall time IC=0.6A; IB1=0.17A IB2=-0.34A;VCC=200V
Silicon Power Transistors
PACKAGE OUTLINE
2SC3970 2SC3970A
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SC3970 2SC3970A
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