Silicon Power Transistors DESCRIPTION TO-220Fa package speed swit

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Silicon Power Transistors DESCRIPTION TO-220Fa package speed swit

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Silicon Power Transistors
DESCRIPTION TO-220Fa package speed switching voltage reliability APPLICATIONS regulators generators frequency inverters purpose power amplifiers
PINNING DESCRIPTION Base Collector Emitter
2SC3866
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=10mA IB=0 IC=1mA IE=0 IE=1mA IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=900V; IE=0 VEB=10V; IC=0 IC=1A VCE=5V
2SC3866
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=2A; IB1=0.4A IB2=-0.8A;RL=150A Pw=20µs,DutyB2%
Silicon Power Transistors
PACKAGE OUTLINE
2SC3866
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SC3866

Silicon Power Transistors DESCRIPTION TO-220Fa package speed swit

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