Silicon Power Transistors DESCRIPTION TO-220Fa package type 2SA13
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Silicon Power Transistors
DESCRIPTION TO-220Fa package type 2SA1396 collector saturation voltage switching speed APPLICATIONS regulator converter frequency power amplifier
PINNING DESCRIPTION Base Collector Emitter
2SC3568
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current(DC) Collector current-peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain CONDITIONS IC=5A ;IB=0.5A;L=1mH IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=100V; IE=0 VCE=100V;VBE(OFF)=-1.5V Ta=125 VEB=5V; IC=0 IC=0.5A VCE=5V IC=3A VCE=5V IC=5A VCE=5V TYP.
2SC3568
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3
UNIT
Switching times Turn-on time Storage time Fall time IC=5A ;IB1=-IB2=0. VCC@50V;RL=10B
hFE-2 Classifications 40-80 60-120 100-200
Silicon Power Transistors
PACKAGE OUTLINE
2SC3568
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SC3568
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