Silicon Power Transistors DESCRIPTION TO-3 package collector curr

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Silicon Power Transistors DESCRIPTION TO-3 package collector curr

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Silicon Power Transistors
DESCRIPTION TO-3 package collector current saturation voltage APPLICATIONS high voltatge ,high speed power switching applications PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC3528
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 Open emitter Open base Open collector CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=2A VCE=5V IC=10A VCE=5V IC=1A VCE=10V;f=1.0MHz
2SC3528
SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2.0A VCC=125V
Silicon Power Transistors
PACKAGE OUTLINE
2SC3528
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Silicon Power Transistors DESCRIPTION TO-3 package collector curr

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