Silicon Power Transistors 2SC3320 DESCRIPTION TO-3PN package

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Silicon Power Transistors 2SC3320 DESCRIPTION TO-3PN package

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Silicon Power Transistors
2SC3320
DESCRIPTION TO-3PN package voltage ,high speed switching reliability APPLICATIONS regulators generators frequency inverters purpose power amplifiers
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL (j-c) PARAMETER Thermal resistance from junction case VALUE 1.56 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A ;IB=1.2A VCB=500V; IE=0 VEB=7V; IC=0 IC=6A VCE=5V
2SC3320
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO
TYP.
UNIT
Switching times resistive load Turn-on time Storage time Fall time IC=7.5A IB1=1.5A IB2=-3A RL=20C PW=20µs;Duty=<2% 0.15
Silicon Power Transistors
PACKAGE OUTLINE
2SC3320
Fig.2 outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SC3320

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