Silicon Power Transistors DESCRIPTION TO-3PN package switching sp
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Silicon Power Transistors
DESCRIPTION TO-3PN package switching speed saturation voltage APPLICATIONS High-Speed Switching Applications PINNING(see Fig.2)
Base Collector;connected mounting base Emitter DESCRIPTION
2SC3256
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=1mA ;RBE=8 IC=1mA; IE=0 IE=1mA; IC=0 IC=7.5A; IB=0.375A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A VCE=2V IC=1A VCE=5V
2SC3256
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=6A; IB1=0.3A;IB2=-0.3A VCC=20V
Classifications 70-140 100-200 140-280
Silicon Power Transistors
PACKAGE OUTLINE
2SC3256
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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