Silicon Power Transistors DESCRIPTION TO-66 package safe operatin
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Silicon Power Transistors
DESCRIPTION TO-66 package safe operating area collector saturation voltage APPLICATIONS general-purpose amplifier switching applications
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N5605 2N5607 2N5609 2N5611
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5605 VCBO Collector-base voltage 2N5607/5609 2N5611 2N5605 VCEO Collector-emitter voltage 2N5607/5609 2N5611 VEBO Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -100 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 4.37 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5605 VCEO(SUS) Collector-emitter sustaining voltage 2N5607/5609 2N5611 VCEsat ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5605/5609 current gain 2N5607/5611 2N5605/5609 Transition frequency 2N5607/5611
2N5605 2N5607 2N5609 2N5611
SYMBOL
CONDITIONS
TYP.
UNIT
IC=50mA ;IB=0
-100
IC=-1A; IB=-0.1A IC=-2.5A VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 IC=-2.5A VCE=-5V IC=-0.5A VCE=-10V
-0.5 -1.5 -0.1 -1.0 -0.1
Silicon Power Transistors
PACKAGE OUTLINE
2N5605 2N5607 2N5609 2N5611
Fig.2 outline dimensions
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