Silicon Power Transistors DESCRIPTION TO-3 package breakdown volt
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Silicon Power Transistors
DESCRIPTION TO-3 package breakdown voltage switching speed. area safe operation APPLICATIONS switching regulator applications PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC3092
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 PW.300µs, Duty Cycle.10% CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=5mA RBE=@ IC=1mA IE=0 IE=1mA IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.6A VCE=5V IC=3A VCE=5V IE=0 VCB=10V, f=1MHz IC=0.6 VCE=10V
2SC3092
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
Switching times Turn-on time Storage time Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50F
hFE-1 classifications 15-30 20-40 30-50
Silicon Power Transistors
PACKAGE OUTLINE
2SC3092
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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