Silicon Power Transistors DESCRIPTION TO-3 package switching area

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Silicon Power Transistors DESCRIPTION TO-3 package switching area

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Silicon Power Transistors
DESCRIPTION TO-3 package switching area safe operation breakdown voltage APPLICATIONS regulators controls oscillators amplifiers circuits PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC3060
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 PW/25µs,Duty cycle/50% Open emitter Open base Open collector CONDITIONS VALUE 1200 -65~175 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=10mA ;RBE=> IC=1mA; IE=0 IE=1mA; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1000V; IE=0, TC=100 IEBO Emitter cut-off current current gain Transition frequency Output capacitance VEB=6V; IC=0 IC=2A VCE=5V IC=0.5A VCE=10V IE=0; VCB=10V,f=1MHz 1200
2SC3060
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat)
TYP.
UNIT
Switching times tstg Rise time Storage time Fall time VCC=400V; IC=2A IB1=0.2A;IB2=-0.6A;
Silicon Power Transistors
PACKAGE OUTLINE
2SC3060
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Silicon Power Transistors DESCRIPTION TO-3 package switching area

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