Silicon Power Transistors DESCRIPTION TO-3 package switching spee
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Silicon Power Transistors
DESCRIPTION TO-3 package switching speed area safe operation breakdown voltage APPLICATIONS switching regulator applications PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC3041
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 PW-300µs,Duty cycle-10% Open emitter Open base Open collector CONDITIONS VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;RBE=? IC=1mA; IE=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A VCE=5V IC=4A VCE=5V IC=0.8A VCE=10V IE=0; VCB=10V,f=1MHz
2SC3041
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2SC3041
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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