Silicon Power Transistors DESCRIPTION TO-3 package breakdown volt
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Silicon Power Transistors
DESCRIPTION TO-3 package breakdown voltage APPLICATIONS voltage power switching character display horizontal deflection output PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC3025
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 -45~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=8 IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1500V; RBE=8
2SC3025
SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES
TYP.
UNIT
Switching times Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time
Silicon Power Transistors
PACKAGE OUTLINE
2SC3025
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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