Silicon Power Transistors DESCRIPTION TO-66 package safe operatin

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Silicon Power Transistors DESCRIPTION TO-66 package safe operatin

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Silicon Power Transistors
DESCRIPTION TO-66 package safe operating area collector saturation voltage APPLICATIONS high frequency power amplifier audio power amplifier drivers.
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N5598 2N5600 2N5602 2N5604
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5598 VCBO Collector-base voltage 2N5600/5602 2N5604 2N5598 VCEO Collector-emitter voltage 2N5600/5602 2N5604 VEBO Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 4.37 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5598 VCEO(SUS) Collector-emitter sustaining voltage 2N5600/5602 2N5604 VCEsat ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5598/5602 current gain 2N5600/5604 2N5598/5602 Transition frequency 2N5600/5604
2N5598 2N5600 2N5602 2N5604
SYMBOL
CONDITIONS
TYP.
UNIT
IC=50mA ;IB=0
IC=1A; IB=0.1A IC=1A VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=5V; IC=0 IC=1A VCE=5V IC=0.5A VCE=10V
Silicon Power Transistors
PACKAGE OUTLINE
2N5598 2N5600 2N5602 2N5604
Fig.2 outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package safe operatin

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