Silicon Power Transistors DESCRIPTION TO-3 package breakdown volt
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Silicon Power Transistors
DESCRIPTION TO-3 package breakdown voltage switching speed. area safe operation APPLICATIONS switching regulator applications PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC2914
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=5mA RBE=7 IC=1mA IE=0 IE=1mA IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=5A VCE=5V
2SC2914
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2SC2914
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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