Silicon Power Transistors DESCRIPTION TO-66 package safe operatin
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Silicon Power Transistors
DESCRIPTION TO-66 package safe operating area collector saturation voltage APPLICATIONS high frequency power amplifier audio power amplifier drivers.
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N5597 2N5599 2N5601 2N5603
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5597 VCBO Collector-base voltage 2N5599/5601 2N5603 2N5597 VCEO Collector-emitter voltage 2N5599/5601 2N5603 VEBO Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -100 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 4.37 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5597 VCEO(SUS) Collector-emitter sustaining voltage 2N5599/5601 2N5603 VCEsat ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5597/5601 current gain 2N5599/5603 2N5597/5601 Transition frequency 2N5599/5603
2N5597 2N5599 2N5601 2N5603
SYMBOL
CONDITIONS
TYP.
UNIT
IC=-50mA ;IB=0
-100
IC=-1A; IB=-0.1A IC=-1A VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 IC=-1A VCE=-5V IC=-0.5A VCE=-10V
-1.0 -1.5 -0.1 -1.0 -0.1
Silicon Power Transistors
PACKAGE OUTLINE
2N5597 2N5599 2N5601 2N5603
Fig.2 outline dimensions
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