Silicon Power Transistors DESCRIPTION TO-3 package current gain s
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Silicon Power Transistors
DESCRIPTION TO-3 package current gain saturation voltage Safe Operating Area APPLICATIONS high power audio, disk head positioners other linear applications. devices also used power switching circuits such relay solenoid drivers, DC-DC converters inverters.
PINNING Base Emitter Collector DESCRIPTION
2N5498
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.17 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS TYP.
2N5498
SYMBOL
UNIT
VCEO(SUS) VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO
Collector-emitter sustaining voltage
IC=0.2A ;IB=0 IC=0.2A ;RBE=100Ohm IC=8A; IB=0.8A IC=15A ;IB=3A VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=15A VCE=5V IC=1A VCE=10V
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector cut-off current
10.0
Collector cut-off current
Emitter cut-off current
current gain
Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
2N5498
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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