Silicon Power Transistors DESCRIPTION TO-3 package collector brea
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Silicon Power Transistors
DESCRIPTION TO-3 package collector breakdown voltage switching times APPLICATIONS speed high voltage switching regulator speed DC-DC converter PINNING(see Fig.2)
Base Emitter DESCRIPTION
2SC2791
Fig.1 simplified outline (TO-3) symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2SC2791
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
VCE(sat) VBE(sat) ICBO
Collector-emitter saturation voltage
IC=3A; IB=0.6A
Base-emitter saturation voltage
IC=3A; IB=0.6A
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
current gain
IC=10mA VCE=5V
hFE-2
current gain
IC=3A VCE=5V
Switching times
tstg
Rise time VCC=400V ,IC=3A, IB1=0.3A;IB2=-0.8A
Storage time
Fall time
Silicon Power Transistors
PACKAGE OUTLINE
2SC2791
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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