Silicon Power Transistors DESCRIPTION TO-3 package capability swi
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Silicon Power Transistors
DESCRIPTION TO-3 package capability switching speeds collector saturation voltage APPLICATIONS intended off-line power supplies ,inverter converter circuits
PINNING Base Emitter Collector DESCRIPTION
2N5466 2N5467
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER 2N5466 Collector-base voltage 2N5467 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter -65~200 CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.48 UNIT
Silicon Power Transistors
2N5466 2N5467
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Trainsistion frequency CONDITIONS IC=0.2A ;IB=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=ratedVCBO; IE=0 VCE=ratedVCEO;VBE(off)=1.5V TC=125 VEB=5V; IC=0 IC=1A VCE=4V IC=2A VCE=4V IC=1A VCE=10V;f=1MHz TYP. UNIT
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEV IEBO hFE-1 hFE-2
Silicon Power Transistors
PACKAGE OUTLINE
2N5466 2N5467
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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