Silicon Power Transistors DESCRIPTION TO-66 package safe operatin
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Silicon Power Transistors
DESCRIPTION TO-66 package safe operating area collector saturation voltage APPLICATIONS switching wide-band amplifier applications.
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2N5427 2N5429
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5427 VCBO Collector-base voltage 2N5429 2N5427 VCEO Collector-emitter voltage 2N5429 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 4.37 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5427 IC=50mA ;IB=0 2N5429 VCEsat-1 VCEsat-2 sat-1 sat-2 ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5427 2N5429 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain Transition frequency IC=2A; IB=0.2A IC=7A ;IB=0.7A IC=2A; IB=0.2A IC=7A ;IB=0.7A VCB=Rated VCBO; IE=0 VCE= 75V; VBE(off)=-1.5V TC=150 VCE= 90V; VBE(off)=-1.5V TC=150 VEB=6V; IC=0 IC=0.5A VCE=2V IC=2A VCE=2V IC=5A VCE=2V IC=0.5A VCE=10V;f=10MHz CONDITIONS
2N5427 2N5429
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
ICEX
Collector cut-off current
Silicon Power Transistors
PACKAGE OUTLINE
2N5427 2N5429
Fig.2 outline dimensions
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