Silicon Power Transistors DESCRIPTION TO-3 package type 2N4398/43
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Silicon Power Transistors
DESCRIPTION TO-3 package type 2N4398/4399/5745 collector/saturation voltage safe operating area APPLICATIONS power amplifier switching circuits applications.
PINNING Base Emitter Collector DESCRIPTION
2N5301 2N5302 2N5303
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5301 VCBO Collector-base voltage 2N5302 2N5303 2N5301 VCEO Collector-emitter voltage 2N5302 2N5303 VEBO Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 2N5301/5302 2N5303 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.875 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 2N5303 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N5301/5302 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 IC=10A; IB=1A IC=20A ;IB=2A IC=15A ;IB=1.5A IC=30A ;IB=6A IC=20A ;IB=4A IC=10A; IB=1A IC=15A ;IB=1.5A IC=20A ;IB=2A IC=20A ;IB=4A IC=15A VCE=2V IC=10A VCE=2V IC=30A VCE=4V IC=20A VCE=4V IC=0.2A ;IB=0 SYMBOL
2N5301 2N5302 2N5303
CONDITIONS
TYP.
UNIT
0.75
VCEsat-2
VCEsat-3 VBEsat-1 VBEsat-2
Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Base-emitter voltage 2N5301/5302 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303 2N5301/5302 2N5303
VBEsat-3
VBE-1
VBE-2 ICEX ICEO ICBO IEBO hFE-1 hFE-2
Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain 2N5303 2N5301/5302 current gain Transition frequency 2N5303 2N5301/5302
VCE= Rated VCEO; VBE(off)=1.5V TC=150 VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VEB=5V; IC=0 IC=1A VCE=2V IC=10A VCE=2V IC=15A VCE=2V IC=20A VCE=4V IC=30A VCE=4V IC=1A VCE=10V;f=1.0MHz
hFE-3
Silicon Power Transistors
PACKAGE OUTLINE
2N5301 2N5302 2N5303
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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