Silicon Power Transistors DESCRIPTION TO-3 package speed switchin
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Silicon Power Transistors
DESCRIPTION TO-3 package speed switching reliability APPLICATIONS regulators convertor state relay purpose power amplifiers
PINNING (See Fig.2) Base Emitter Collector DESCRIPTION
2N5264
Fig.1 simplified outline (TO-3) symbol
MAXIMUN RATINGS(Ta=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2N5264
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A IB=0
VCEsat
Collector-emitter saturation voltage
IC=7A; IB=1.4A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.4A
ICBO
Collector cut-off current
VCB=300V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
current gain
IC=1A VCE=5V
Transition frequency
IC=1A VCE=10V
Silicon Power Transistors
PACKAGE OUTLINE
2N5264
Fig.2 Outline dimensions
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