Silicon Power Transistors DESCRIPTION TO-3 package type 2N4901/49
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
DESCRIPTION TO-3 package type 2N4901/4902/4903 collector saturation voltage APPLICATIONS general-purpose switching power amplifier applications.
PINNING Base Emitter Collector DESCRIPTION
2N5067 2N5068 2N5069
Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N5067 VCBO Collector-base voltage 2N5068 2N5069 2N5067 VCEO Collector-emitter voltage 2N5068 2N5069 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 87.5 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5067 VCEO(SUS) Collector-emitter sustaining voltage 2N5068 2N5069 VCEsat-1 VCEsat-2 ICEO ICBO ICEX IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Transition frequency IC=1A; IB=0.1A IC=5A ;IB=1A IC=1A VCE=2V IC=0.2A ;IB=0 SYMBOL
2N5067 2N5068 2N5069
CONDITIONS
TYP.
UNIT
VCE=Rated VCEO; IB=0 VCB=Rated VCBO; IE=0 VCE= Rated VCEO; VBE(off)=1.5V TC=150 VEB=5V; IC=0 IC=1A VCE=2V IC=5A VCE=2V IC=1A VCE=10V
Silicon Power Transistors
PACKAGE OUTLINE
2N5067 2N5068 2N5069
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Other recent searches
TIGA51 - TIGA51 TIGA51 Datasheet
SN65175 - SN65175 SN65175 Datasheet
SN75175 - SN75175 SN75175 Datasheet
MC3486 - MC3486 MC3486 Datasheet
SF2085A - SF2085A SF2085A Datasheet
DM7416 - DM7416 DM7416 Datasheet
CSTLS16M0X53-B0 - CSTLS16M0X53-B0 CSTLS16M0X53-B0 Datasheet
2SK1280 - 2SK1280 2SK1280 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
