Silicon Power Transistors DESCRIPTION TO-3PN package type 2SB829
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Silicon Power Transistors
DESCRIPTION TO-3PN package type 2SB829 area safe operation collector saturation voltage APPLICATIONS drivers, inverters, high-current switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
2SD1065
Absolute maximum ratings(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
2SD1065
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=1mA ;RBE=> IC=1mA ;IE=0 IE=1mA ;IC=0 IC=8A; IB=0.4A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A VCE=2V IC=8A VCE=2V IC=1A VCE=5V 0.18 TYP. UNIT SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2
Switching times tstg Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;RL=10E 0.20 0.10 1.00
hFE-1 Classifications 70-140 100-200 140-280
Silicon Power Transistors
PACKAGE OUTLINE
2SD1065
Fig.2 outline dimensions
Silicon Power Transistors
2SD1065
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