Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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Silicon Power Transistors
DESCRIPTION TO-66 package collector saturation voltage safe operating area complement type 2N4900 APPLICATIONS driver circuits,switching amplifier applications
PINNING Base Emitter Collector DESCRIPTION
2N4910 2N4911 2N4912
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2N4910 VCBO Collector-base voltage 2N4911 2N4912 2N4910 VCEO Collector-emitter voltage 2N4911 2N4912 VEBO Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N4910 VCEO(SUS) Collector-emitter sustaining voltage 2N4911 2N4912 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage 2N4910 ICEO Collector cut-off current 2N4911 2N4912 ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain Output capacitance Transition frequency IC=1A; IB=0.1A IC=1A ;IB=0.1A IC=1A VCE=1V VCE=20V; IB=0 VCE=30V; IB=0 VCE=40V; IB=0 IC=0.1A ;IB=0 SYMBOL
2N4910 2N4911 2N4912
CONDITIONS
TYP.
UNIT
VCE=Rated VCEO; VBE(off)=1.5V TC=150 VCB=Rated VCBO; IE=0 VEB=5V; IC=0 IC=50mA VCE=1V IC=500mA VCE=1V IC=1.0A VCE=1V IE=0;VCB=10V;f=1MHz IC=250mA;VCE=10V;f=1MHz
Silicon Power Transistors
PACKAGE OUTLINE
2N4910 2N4911 2N4912
Fig.2 outline dimensions

Silicon Power Transistors DESCRIPTION TO-66 package collector sat

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