Silicon Power Transistors DESCRIPTION TO-220Fpackage saturation v
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Silicon Power Transistors
DESCRIPTION TO-220Fpackage saturation voltage. type 2SC3748 switching speed. APPLICATIONS inductance drivers, lamp drivers. drivers, converters amplifications regulators,drivers
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
2SA1471
Fig.1 simplified outline (TO-220F) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 Collector power dissipation TC=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE UNIT
Silicon Power Transistors
2SA1471
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-1mA; IE=0 IC=-1mA; RBE=< IE=-1mA; IC=0 IC=-5A; IB=-0.25A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A VCE=-2V IC=-1A VCE=-5V -0.4 -100 -100 TYP. UNIT
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO
Switching times tstg Turn-on time Storage time Fall time VCC=20V; IC=5A IB1=-IB2=-0.25A RL=4B
Silicon Power Transistors
PACKAGE OUTLINE
2SA1471
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1471
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