Silicon Power Transistors 2SA1307 DESCRIPTION TO-220Fa packa
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Silicon Power Transistors
2SA1307
DESCRIPTION TO-220Fa package type 2SC3299 saturation voltage speed switching time APPLICATIONS current switching applications
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=-10mA IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V;IE=0 VEB=-5V; IC=0 IC=-1A VCE=-1V IC=-3A VCE=-1V IE=0; VCB=-10V,f=1MHz IC=-1A VCE=-4V SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
2SA1307
TYP.
UNIT
-0.4 -1.2 -1.0 -1.0
Switching times Turn-on time Storage time Fall time IB1=-IB2=-0.15A,VCC=30V RL=10A
hFE-1 Classifications 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1307
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SA1307
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