Silicon Power Transistors 2SA1305 DESCRIPTION TO-220Fa packa
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Silicon Power Transistors
2SA1305
DESCRIPTION TO-220Fa package collector saturation voltage transition frequency APPLICATIONS current switching applications
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2SA1305
SYMBOL
TYP.
UNIT
V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO
Collector-emitter breakdown voltage
IC=-10mA IB=0 IE=-50µA IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-30V;IE=0 VEB=-5V; IC=0 IC=-0.5A VCE=-3V IC=-0.5A VCE=-5V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
-1.0
Base-emitter saturation voltage
-1.5
Collector cut-off current
-1.0
Emitter cut-off current
-1.0
current gain
Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
2SA1305
Fig.2 Outline dimensions (unindicated tolerance:±0.15
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