Silicon Power Transistors DESCRIPTION TO-66 package safe operatin
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Silicon Power Transistors
DESCRIPTION TO-66 package safe operating area breadown voltage APPLICATIONS general-purpose amplifier switching applications
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION
2SA1250
Fig.1 simplified outline (TO-66) symbol
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
2SA1250
SYMBOL
TYP.
UNIT
V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
Collector-emitter breakdown voltage
IC=-10mA ;IB=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=200V; IE=0 VEB=-7V; IC=0 IC=-2A VCE=-1V IC=-5A VCE=-1V
-200
Emitter-base breakdown voltage
Collector-emitter saturation voltage
-1.5
Base-emitter saturation voltage
-2.0
Collector cut-off current
Emitter cut-off current
current gain
current gain
Silicon Power Transistors
PACKAGE OUTLINE
2SA1250
Fig.2 outline dimensions
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