Silicon Power Transistors 2SA744/745/745A DESCRIPTION TO-3 p
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Silicon Power Transistors
2SA744/745/745A
DESCRIPTION TO-3 package type 2SC1402/1403/1403A APPLICATIONS power switching general purpose applications
PINNING(see Fig.2) Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
Absolute maximum ratings(Ta=
SYMBOL PARAMETER 2SA744 VCBO Collector-base voltage 2SA745 2SA745A 2SA744 VCEO Collector-emitter voltage 2SA745 2SA745A VEBO Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -100 -120 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SA744 V(BR)CEO Collector-emitter breakdown voltage 2SA745 2SA745A VCEsat Collector-emitter saturation voltage 2SA744 ICBO Collector cut-off current 2SA745 2SA745A IEBO Emitter cut-off current current gain Transition frequency IC=-3A; IB=-0.3A VCB=-80V; IE=0 VCB=-100V; IE=0 VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A VCE=-4V IC=-0.5A VCE=-12V IC=-50mA ;IB=0 CONDITIONS
2SA744/745/745A
SYMBOL
-100 -120
TYP.
UNIT
-1.5
-1.0
-1.0
Switching times Rise time Storage time Fall time IC=-3A;RL=4A IB1=-0.2A; IB2=0.1A VCC=-12V 0.55
Silicon Power Transistors
PACKAGE OUTLINE
2SA744/745/745A
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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