Silicon Power Transistors DESCRIPTION TO-3PN package type TIP2955

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Silicon Power Transistors DESCRIPTION TO-3PN package type TIP2955

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Silicon Power Transistors
DESCRIPTION TO-3PN package type TIP2955 25°C case temperature continuous collector current APPLICATIONS general-purpose switching amplifier applications. PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
TIP3055
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.39 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Second breakdown collector current with base forward biased Transition frequency CONDITIONS IC=30mA ;IB=0 IC=4A; IB=0.4A IC=10A ;IB=3.3A IC=4A VCE=4V VCE=30V; IB=0 VCE=70Vdc;RBE=100Ohm VCE=100Vdc,VBE(off)=1.5Vdc VEB=7V; IC=0 IC=4A VCE=4V IC=10A VCE=4V VCE=30Vdc,t=1.0s, Nonrepetitive IC=0.5A VCE=10V SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 ICEO ICER ICEV IEBO hFE-1 hFE-2 Is/b
TIP3055
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
TIP3055
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
TIP3055

Silicon Power Transistors DESCRIPTION TO-3PN package type TIP2955

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