Silicon Power Transistors 2N3055 DESCRIPTION TO-3 package ty

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Silicon Power Transistors 2N3055 DESCRIPTION TO-3 package ty

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Silicon Power Transistors
2N3055
DESCRIPTION TO-3 package type MJ2955 Current Gain -hFE 20-70 Saturation Voltage VCE(sat) (Max) Safe Operating Area APPLICATIONS general-purpose switching amplifier applications.
PINNING Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
Absolute maximum ratings(Ta=
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.52 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Second breakdown collector current With base forward biased Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=0.2A ;RBE=100A IC=4A ;IB=0.4A IC=10A ;IB=3.3A IC=4A VCE=4V VCE=30V; IB=0 VCE=100V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=4A VCE=4V IC=10A VCE=4V VCE=40Vdc,t=1.0s, Nonrepetitive IC=0.5A VCE=10V 2.87 TYP.
2N3055
SYMBOL VCEO(SUS) VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE-1 hFE-2 Is/b
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N3055
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
2N3055

Silicon Power Transistors 2N3055 DESCRIPTION TO-3 package ty

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