Silicon Power Transistors DESCRIPTION TO-3PN package voltage,high
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Silicon Power Transistors
DESCRIPTION TO-3PN package voltage,high speed APPLICATIONS regulators control systems
PINNING (See Fig.2) Base Collector Emitter DESCRIPTION
BUW13 BUW13A
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER BUW13 VCBO Collector-base voltage BUW13A BUW13 VCEO Collector-emitter voltage BUW13A VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~175 Open emitter 1000 CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUW13 IC=0.1A IB=0; L=25mH BUW13A BUW13 BUW13A BUW13 BUW13A IC=10A; IB=2A CONDITIONS
BUW13 BUW13A
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A IC=10A; IB=2A IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 TC=125 VEB=9V; IC=0 IC=20mA VCE=5V IC=1.5A VCE=5V
VBEsat
Base-emitter saturation voltage
ICES IEBO hFE-1 hFE-2
Collector cut-off current Emitter cut-off current current gain current gain
Switching times resistive load Turn-on time Storage time Fall time BUW13A IC=8A ;IB1=-IB2=1.6A
BUW13 IC=10A ;IB1=-IB2=2A
Silicon Power Transistors
PACKAGE OUTLINE
BUW13 BUW13A
Fig.2 Outline dimensions(unindicated tolerance:±0.10mm)
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