Silicon Power Transistors DESCRIPTION TO-3PN package voltage,fast
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Silicon Power Transistors
DESCRIPTION TO-3PN package voltage,fast speed collector saturation voltage APPLICATIONS intended operating industrial applications
PINNING (See Fig.2) Base Collector;connected mounting base Emitter DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER Collector-base voltage BUW12 BUW12A BUW12 BUW12A Open emitter CONDITIONS VALUE 1000 TC=25 -65~175 UNIT
VCEO VEBO Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUW12 IC=0.1A IB=0; L=25mH BUW12A IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS SYMBOL
BUW12 BUW12A
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage BUW12 BUW12A
ICES
Collector cut-off current
VCE=1000V; VBE=0 VEB=9V; IC=0 IC=1A VCE=5V
IEBO
Emitter cut-off current current gain
Switching times resistive load Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V
Silicon Power Transistors
PACKAGE OUTLINE
BUW12 BUW12A
Fig.2 Outline dimensions
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