Silicon Power Transistors DESCRIPTION TO-3PN package voltage ;hig
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Silicon Power Transistors
DESCRIPTION TO-3PN package voltage ;high speed APPLICATIONS regulators control systems
PINNING (See Fig.2) Base Collector Emitter DESCRIPTION
BUW11 BUW11A
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER Collector-base voltage BUW11 BUW11A BUW11 BUW11A Open emitter CONDITIONS VALUE 1000 TC=25 -65~150 UNIT
VCEO VEBO Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL j-mb PARAMETER Thermal resistance from junction mounting base 1.25 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUW11 IC=0.1A IB=0; L=25mH BUW11A BUW11 BUW11A BUW11 BUW11A IC=3A; IB=0.6A CONDITIONS
BUW11 BUW11A
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A IC=3A; IB=0.6A IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA VCE=5V IC=0.5A VCE=5V
VBEsat
Base-emitter saturation voltage
ICES IEBO hFE-1 hFE-2
Collector cut-off current Emitter cut-off current current gain current gain
Switching times resistive load Turn-on time Storage time Fall time BUW11AF IC=2.5A ;IB1=-IB2=0.5A
BUW11F IC=3A ;IB1=-IB2=0.6A
Silicon Power Transistors
PACKAGE OUTLINE
BUW11 BUW11A
Fig.2 Outline dimensions (unindicated tolerance:±0.10
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