Silicon Power Transistors DESCRIPTION TO-3PN package voltage ,hig
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Silicon Power Transistors
DESCRIPTION TO-3PN package voltage ,high speed APPLICATIONS regulators relay drivers circuits
PINNING (See Fig.2) Base Collector;connected mounting base Emitter DESCRIPTION
BUV48 BUV48A
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Ta=25
SYMBOL VCBO PARAMETER BUV48 Collector-base voltage BUV48A BUV48 VCEO VEBO Tstg Collector-emitter voltage BUV48A Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~175 Open emitter 1000 CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUV48 IC=0.2A IB=0; L=25mH BUV48A IE=50mA; IC=0 IC=10A; IB=2A TC=100 IC=8A ;IB=1.6A TC=100 IC=15A ;IB=3A CONDITIONS SYMBOL
BUV48 BUV48A
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VEBO(BR)
Emitter-base breakdown voltage BUV48 BUV48A BUV48 BUV48A BUV48 BUV48A
VCEsat-1
Collector-emitter saturation voltage
VCEsat-2
Collector-emitter saturation voltage
IC=12A ;IB=2.4A IC=10A; IB=2A TC=100 IC=8A ;IB=1.6A TC=100 VCEX=rated VCES; VBE(off)=1.5V TC=125 VEB=5V; IC=0 BUV48 IC=10A VCE=5V BUV48A IC=8A VCE=5V IE=0 VCB=10V,f=1MHz
VBEsat
Base-emitter saturation voltage
ICEX IEBO
Collector cut-off current Emitter cut-off current
current gain
Output capacitance
Switching times resistive load Delay time Rise time Storage time Fall time
BUV48 IC=10A ;IB1=2A; VCC=300V VBE(off)=5V BUV48A IC=8A ;IB1=1.6A; VCC=300V VBE(off)=5V
Silicon Power Transistors
PACKAGE OUTLINE
BUV48 BUV48A
Fig.2 Outline dimensions
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