Silicon Power Transistors DESCRIPTION With TO-3PN package type TI
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Silicon Power Transistors
DESCRIPTION With TO-3PN package type TIP35/35A/35B/35C current gain hFE=25(Min)@IC=-1.5A APPLICATIONS general purpose power amplifier switching applications. PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
TIP36/36A/36B/36C
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS (TC=
SYMBOL PARAMETER TIP36 VCBO Collector-base voltage TIP36A TIP36B TIP36C TIP36 VCEO Collector-emitter voltage TIP36A TIP36B TIP36C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -100 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER TIP36 Collector-emitter sustaining voltage TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage Collector cut-off current TIP36/36A TIP36B/36C TIP36 Collector cut-off current TIP36A TIP36B TIP36C IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency IC=-15A ;IB=-1.5A IC=-25A; IB=-5A IC=-15A VCE=-4V IC=-25A VCE=-4V VCE=-30V; IB=0 CONDITIONS SYMBOL
TIP36/36A/36B/36C
TYP.
UNIT
VCEO(SUS)
-100 -1.8 -4.0 -2.0 -4.0
ICEO
-1.0 VCE=-60V; IB=0 VCE=-40V;VEB=0 VCE=-60V;VEB=0 -0.7 VCE=-80V;VEB=0 VCE=-100V;VEB=0 VEB=-5V; IC=0 IC=-1.5A VCE=-4V IC=-15A VCE=-4V IC=-1A VCE=-10V -1.0
ICES
Silicon Power Transistors
PACKAGE OUTLINE
TIP36/36A/36B/36C
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
TIP36/36A/36B/36C
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