Silicon Power Transistors DESCRIPTION TO-3PN package type TIP36/3
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Silicon Power Transistors
DESCRIPTION TO-3PN package type TIP36/36A/36B/36C current gain hFE=25(Min)@IC=1.5A APPLICATIONS general purpose power amplifier switching applications. PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
TIP35/35A/35B/35C
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS (TC=
SYMBOL PARAMETER TIP35 VCBO Collector-base voltage TIP35A TIP35B TIP35C TIP35 VCEO Collector-emitter voltage TIP35A TIP35B TIP35C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER TIP35 Collector-emitter sustaining voltage TIP35A IC=30mA ;IB=0 TIP35B TIP35C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage Collector cut-off current TIP35/35A TIP35B/35C TIP35 Collector cut-off current TIP35A TIP35B TIP35C IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency IC=15A ;IB=1.5A IC=25A; IB=5A IC=15A VCE=4V IC=25A VCE=4V VCE=30V; IB=0 CONDITIONS SYMBOL
TIP35/35A/35B/35C
TYP.
UNIT
V(SUS)CEO
ICEO
VCE=60V; IB=0 VCE=40V;VEB=0 VCE=60V;VEB=0 VCE=80V;VEB=0 VCE=100V;VEB=0 VEB=5V; IC=0 IC=1.5A VCE=4V IC=15A VCE=4V IC=1A VCE=10V
ICES
Silicon Power Transistors
PACKAGE OUTLINE
TIP35/35A/35B/35C
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Silicon Power Transistors
TIP35/35A/35B/35C
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