Silicon Power Transistors DESCRIPTION TO-3PN package type TIP33/3
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Silicon Power Transistors
DESCRIPTION TO-3PN package type TIP33/33A/33B/33C current gain hFE=40(Min)@IC=1.0A APPLICATIONS general purpose power amplifier switching applications. PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
TIP34/34A/34B/34C
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL PARAMETER TIP34 VCBO Collector-base voltage TIP34A TIP34B TIP34C TIP34 VCEO Collector-emitter voltage TIP34A TIP34B TIP34C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -100 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.56 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER TIP34 Collector-emitter sustaining voltage TIP34A IC=-30mA ;IB=0 TIP34B TIP34C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage Collector cut-off current TIP34/34A TIP34B/34C TIP34 Collector cut-off current TIP34A TIP34B TIP34C IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency IC=-3A ;IB=-0.3A IC=-10A; IB=-2.5A IC=-3A VCE=-4V IC=-10A VCE=-4V VCE=-30V; IB=0 CONDITIONS SYMBOL
TIP34/34A/34B/34C
TYP.
UNIT
VCEO(SUS)
-100 -1.0 -4.0 -1.6 -3.0
ICEO
-0.7 VCE=-60V; IB=0 VCE=-40V;VEB=0 VCE=-60V;VEB=0 -0.4 VCE=-80V;VEB=0 VCE=-100V;VEB=0 VEB=-5V; IC=0 IC=-1A VCE=-4V IC=-3A VCE=-4V IC=-0.5A VCE=-10V;f=1MHz -1.0
ICES
Silicon Power Transistors
PACKAGE OUTLINE
TIP34/34A/34B/34C
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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