Silicon Power Transistors DESCRIPTION TO-3PN package type TIP34/3
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Silicon Power Transistors
DESCRIPTION TO-3PN package type TIP34/34A/34B/34C current gain hFE=40(Min)@IC=1.0A APPLICATIONS general purpose power amplifier switching applications. PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
TIP33/33A/33B/33C
Fig.1 simplified outline (TO-3PN) symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL PARAMETER TIP33 VCBO Collector-base voltage TIP33A TIP33B TIP33C TIP33 VCEO Collector-emitter voltage TIP33A TIP33B TIP33C VEBO Tstg SYMBOL Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
PARAMETER Thermal resistance junction case 1.56 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER TIP33 Collector-emitter sustaining voltage TIP33A IC=30mA ;IB=0 TIP33B TIP33C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage Collector cut-off current TIP33/33A TIP33B/33C TIP33 Collector cut-off current TIP33A TIP33B TIP33C IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency IC=3A ;IB=0.3A IC=10A; IB=2.5A IC=3A VCE=4V IC=10A VCE=4V VCE=30V; IB=0 CONDITIONS SYMBOL
TIP33/33A/33B/33C
TYP.
UNIT
VCEO(SUS)
ICEO
VCE=60V; IB=0 VCE=40V;VEB=0 VCE=60V;VEB=0 VCE=80V;VEB=0 VCE=100V;VEB=0 VEB=5V; IC=0 IC=1A VCE=4V IC=3A VCE=4V IC=0.5A VCE=10V;f=1MHz
ICES
Silicon Power Transistors
PACKAGE OUTLINE
TIP33/33A/33B/33C
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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