Silicon Power Transistors DESCRIPTION TO-220Fa package voltage ,h
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Silicon Power Transistors
DESCRIPTION TO-220Fa package voltage ,high speed APPLICATIONS regulators control systems
PINNING Base Collector Emitter DESCRIPTION
BUT18F BUT18AF
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Tc=25
SYMBOL PARAMETER BUT18F VCBO Collector-base voltage BUT18AF BUT18F VCEO Collector-emitter voltage BUT18AF VEBO Ptot Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~150 Open emitter 1000 CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT18F IC=0.1A; IB=0;L=25mH BUT18AF IC=4A; IB=0.8A IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA VCE=5V IC=1A VCE=5V CONDITIONS
BUT18F BUT18AF
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage BUT18F BUT18AF
ICES
Collector cut-off current
IEBO hFE-1 hFE-2
Emitter cut-off current current gain current gain
Switching times resistive load Turn-on time Storage time Fall time IC=4A; IB1=-IB2=0.8A VCC=250V
Silicon Power Transistors
PACKAGE OUTLINE
BUT18F BUT18AF
Fig.2 Outline dimensions (unindicated tolerance:±0.15
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