Silicon Power Transistors DESCRIPTION TO-220Fa package voltage ,h

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Silicon Power Transistors DESCRIPTION TO-220Fa package voltage ,h

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Silicon Power Transistors
DESCRIPTION TO-220Fa package voltage ,high speed APPLICATIONS regulators control systems
PINNING Base Collector Emitter DESCRIPTION
BUT12F BUT12AF
Fig.1 simplified outline (TO-220Fa) symbol
Absolute maximum ratings (Tc=25
SYMBOL VCBO PARAMETER Collector-base voltage BUT12F BUT12AF BUT12F BUT12AF CONDITIONS Open emitter VALUE 1000 TC=25 -65~150 UNIT
VCEO VEBO Ptot Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature
Open base Open collector
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction ambient VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS
BUT12F BUT12AF
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A IC=6A; IB=1.2A IC=5A; IB=1A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=10mA VCE=5V IC=1A VCE=5V
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO hFE-1 hFE-2
Emitter cut-off current current gain current gain
Switching times resistive load Turn-on time Storage time Fall time BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V
BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V
Silicon Power Transistors
PACKAGE OUTLINE
BUT12F BUT12AF
Fig.2 Outline dimensions (unindicated tolerance:±0.15

Silicon Power Transistors DESCRIPTION TO-220Fa package voltage ,h

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