Asymmetrical dual N-channel enhancement mode MOSFET Summary Devic

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Asymmetrical dual N-channel enhancement mode MOSFET Summary Devic

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ZXMN3F318DN8
Asymmetrical dual N-channel enhancement mode MOSFET
Summary Device
V(BR)DSS (nC)
12.9
RDS(on)
0.024 VGS= 0.039 VGS= 4.5V 0.035 VGS=
0.055 VGS= 4.5V
Description
This generation dual Trench MOSFET from Zetex features on-resistance achievable with (4.5V) gate drive.
Features
on-resistance 4.5V gate drive capability profile SOIC package
Applications
DC-DC Converters SMPS Load switching Motor control Backlighting
Ordering information
Device Reel size (inches) Tape width (mm) Quantity reel
ZXMN3F318DN8TA
Device marking
ZXMN 3F318 Pinout view
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT LIMIT UNIT
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=10V; TA=25°C VGS=10V; TA=70°C VGS=10V; TA=25°C Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation =25°C Linear Derating Factor Power Dissipation =25°C Linear Derating Factor Power Dissipation =25°C Linear Derating Factor Operating Storage Temperature Range THERMAL RESISTANCE
PARAMETER
VDSS
1.25
Tstg
mW/°C mW/°C mW/°C
+150
SYMBOL
VALUE
UNIT
Junction Ambient Junction Ambient Junction Ambient Junction Lead
°C/W °C/W °C/W °C/W
NOTES device surface mounted 25mm 25mm with high coverage single sided copper, still conditions. device surface mounted measured sec. Repetitive rating 25mm 25mm PCB, D=0.02, pulse width 300us pulse width limited maximum junction temperature. dual device with active die. device with active running equal power. Thermal resistance from junction solder-point drain lead). Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Thermal Characteristics
Drain Current
Limited
Single Pulse Tamb=25°C active 100ms 10ms 100µs
Power Dissipation
RDS(on)
100m 100m
Drain-Source Voltage
active
active
Temperature (°C)
Safe Operating Area
amb=25°C active D=0.5 D=0.2 100µ 100m
Derating Curve
Thermal Resistance (°C/W)
Maximum Power
Single Pulse amb=25°C active
Single Pulse D=0.05 D=0.1
100µ 100m
Pulse Width
Pulse Width
Transient Thermal Impedance
Pulse Power Dissipation
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
ELECTRICAL CHARACTERISTICS Tamb 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
0.024
250A, VGS=0V VDS= 30V, VGS=0V VGS=±20V, VDS=0V 250A, VDS=VGS VGS= 10V, 7.0A
0.039 Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage
VGS= 4.5V, 6.0A VDS= 15V,
Ciss Coss Crss td(on) td(off)
16.5
VDS= 15V, VGS=0V f=1MHz
12.9 2.52
VDD= 15V, RG6.0, VGS=
VDS= 15V, VGS=
0.82
Tj=25°C, 1.7A, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
Tj=25°C, 2.2A, di/dt=100A/µs
Measured under pulsed conditions. Pulse width 300s. Duty cycle Switching characteristics independent operating junction temperature. design only, subject production testing.
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Typical Characteristics
Drain Current
3.5V
Drain Current
150°C
3.5V
2.5V
25°C
2.5V
0.01
0.01
1.5V
Drain-Source Voltage
Drain-Source Voltage
Output Characteristics
Output Characteristics
RDS(on)
Normalised RDS(on) VGS(th)
Drain Current
150°C
25°C
250uA
VGS(th)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance 1000
25°C
Gate-Source Voltage
Junction Temperature (°C)
Normalised Curves Temperature
0.01
150°C
0.01 0.01
3.5V 4.5V
Reverse Drain Current
2.5V
25°C
On-Resistance Drain Current
Drain Current
Source-Drain Voltage Source-Drain Diode Forward Voltage
1E-3
Typical Characteristics
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Gate-Source Voltage
1MHz CISS COSS CRSS
Drain Source Voltage Capacitance Drain-Source Voltage
Capacitance (pF)
Charge (nC)
Gate-Source Voltage Gate Charge
Test Circuits
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
ELECTRICAL CHARACTERISTICS Tamb 25°C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
V(BR)DSS IDSS IGSS VGS(th) RDS(on)
0.035
250A, VGS=0V VDS= 30V, VGS=0V VGS=±20V, VDS=0V 250A, VDS=VGS VGS= 10V, 5.0A
0.055 Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage
VGS= 4.5V, VDS= 15V,
Ciss Coss Crss td(on) td(off)
11.8
VDS= 15V, VGS=0V f=1MHz
11.5
VDD= 15V, RG6.0, VGS=
VDS= 15V, VGS=
0.82
Tj=25°C, 1.7A, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
Tj=25°C, 2.1A, di/dt=100A/µs
Measured under pulsed conditions. Pulse width 300s. Duty cycle Switching characteristics independent operating junction temperature. design only, subject production testing.
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Typical Characteristics
Drain Current
Drain Current
4.5V
3.5V
150°C
4.5V
3.5V
2.5V
25°C 2.5V
0.01
Drain-Source Voltage
0.01
Drain-Source Voltage
Output Characteristics
Output Characteristics
RDS(on)
150°C
25°C
Normalised RDS(on) VGS(th)
Drain Current
250uA
VGS(th)
0.01
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance
1000
25°C
Gate-Source Voltage
Junction Temperature (°C)
Normalised Curves Temperature
0.01 1E-3
150°C
0.01 0.01
3.5V 4.5V
Reverse Drain Current
2.5V
25°C
On-Resistance Drain Current
Drain Current
Source-Drain Voltage Source-Drain Diode Forward Voltage
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Typical Characteristics
Gate-Source Voltage
Capacitance (pF)
CISS
1MHz
COSS CRSS
Drain Source Voltage Capacitance Drain-Source Voltage
Charge (nC)
Gate-Source Voltage Gate Charge
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Packaging details
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Intentionally left blank
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com
ZXMN3F318DN8
Definitions Product change Diodes Incorporated reserves right alter, without notice, specifications, design, price conditions supply product service. Customers solely responsible obtaining latest relevant information before placing orders. Applications disclaimer circuits this design/application note offered design ideas. responsibility user ensure that circuit user's application meets with user's requirements. representation warranty given liability whatsoever assumed Diodes Inc. with respect accuracy such information, infringement patents other intellectual property rights arising from such otherwise. Diodes Inc. does assume legal responsibility will held legally liable (whether contract, tort (including negligence), breach statutory duty, restriction otherwise) damages, loss profit, business, contract, opportunity consequential loss these circuit applications, under circumstances. Life support Diodes Zetex products specifically authorized critical components life support devices systems without express written approval Chief Executive Officer Diodes Incorporated used herein: Life support devices systems devices systems which: intended implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device affect safety effectiveness. Reproduction product specifications contained this publication issued provide outline information only which (unless agreed company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. Terms Conditions products sold subjects Diodes Inc. terms conditions sale, this disclaimer (save event conflict between when terms contract shall prevail) according region, supplied time order acknowledgement. latest information technology, delivery terms conditions prices, please contact your nearest Zetex sales office. Quality product Diodes Zetex Semiconductors Limited 9001 TS16949 certified semiconductor manufacturer. ensure quality service products strongly advise purchase parts directly from Zetex Semiconductors regionally authorized distributors. complete listing authorized distributors please visit: www.zetex.com www.diodes.com Diodes Inc. does warrant accept liability whatsoever respect parts purchased through unauthorized sales channels. (Electrostatic discharge) Semiconductor devices susceptible damage ESD. Suitable precautions should taken when handling transporting devices. possible damage devices depends circumstances handling transporting, nature device. extent damage vary from immediate functional parametric malfunction degradation function performance over time. Devices suspected being affected should replaced. Green compliance Diodes Zetex committed environmental excellence aspects operations which includes meeting exceeding regulatory requirements with respect hazardous substances. Numerous successful programs have been implemented reduce hazardous substances and/or emissions. Diodes Zetex components compliant with RoHS directive, through this supporting customers their compliance with WEEE directives. Product status key: "Preview" Future device intended production some point. Samples available "Active" Product status recommended designs "Last time (LTB)" Device will discontinued last time period delivery effect "Not recommended designs" Device still production support existing designs production "Obsolete" Production been discontinued Datasheet status key: "Draft version" This term denotes very early datasheet version contains highly provisional information, which change manner without notice. "Provisional version" This term denotes pre-release datasheet. provides clear indication anticipated performance. However, changes test conditions specifications occur, time without notice. "Issue" This term denotes issued datasheet containing finalized specifications. However, changes specifications occur, time without notice. Diodes Zetex sales offices Europe Zetex GmbH Kustermann-park D-81541 Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Americas Zetex Veterans Memorial Highway Hauppauge, 11788 Telephone: 2222 Fax: 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) 3701-04 Metroplaza Tower Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 Fax: (852) 24250 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 Dallas Parkway Suite 850, Dallas TX75248, Telephone 2810 www.diodes.com
2008 Published Diodes Incorporated
Issue March 2008
Zetex Semiconductors 2008
www.zetex.com

Asymmetrical dual N-channel enhancement mode MOSFET Summary Devic

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