Summary V(BR)DSS RDS(on) 0.200 VGS= 4.5V 0.240 VGS

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Summary V(BR)DSS RDS(on) 0.200 VGS= 4.5V 0.240 VGS

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ZXMN2088DE6 Dual SOT23-6 N-channel enhancement mode MOSFET with gate drive capability
Summary
V(BR)DSS
RDS(on)
0.200 VGS= 4.5V
0.240 VGS= 2.5V 0.310 VGS= 1.8V
Description
This generation dual n-channel trench MOSFET from Zetex features on-resistance achievable with gate drive.
Features
on-resistance gate drive capability SOT23-6 (dual) package
Applications
Power Management functions Disconnect switches Relay driving load switching
Ordering information
Device Reel size (inches) Tape width (mm) Quantity reel
Pinout view
ZXMN2088DE6TA
Device marking
2088
3,000
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Absolute maximum ratings
Parameter
Drain-Source voltage Gate-Source voltage Continuous Drain current VGS= 4.5V; TA=25°C VGS= 4.5V; TA=70°C VGS= 4.5V; TA=25°C Pulsed Drain current Power dissipation =25°C Linear derating factor Power dissipation =25°C Linear derating factor Power dissipation =25°C Linear derating factor Operating storage temperature range Tstg
Symbol
VDSS
Limit
Unit
10.4 +150
mW/°C mW/°C mW/°C
Thermal resistance Parameter
Junction Ambient Junction Ambient Junction Ambient
Symbol
Value
Unit
°C/W °C/W °C/W
NOTES:
device surface mounted 25mm 25mm with high coverage single sided copper, still conditions. above measured sec. Repetitive rating 25mm 25mm PCB, D=0.02, pulse width 300us pulse width limited maximum junction temperature. device with active device with active running equal power.
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Thermal Characteristics
Power Dissipation
RDS(on)
Drain Current
Limited
Active (a)(e)
100ms Single Pulse amb=25°C Active (a)(d) 10ms 100µs
100m
Active (a)(d)
Drain-Source Voltage
Temperature (°C)
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
100µ 100m
D=0.2 D=0.1 D=0.05 Single Pulse D=0.5 Active (a)(d)
Maximum Power
amb=25°C
Single Pulse amb=25°C Active (a)(d)
100µ 100m
Pulse Width
Pulse Width
Transient Thermal Impedance
Pulse Power Dissipation
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Electrical characteristics Tamb 25°C unless otherwise stated).
Parameter Static Drain-Source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source on-state resistance V(BR)DSS IDSS IDSS IGSS VGS(th) RDS(on) Forward transconductance Dynamic
Symbol
Min.
Typ.
Max.
Unit
Conditions
0.200 0.240 0.310
250A, VGS=0V VDS= VGS=0V VDS= 20V, VGS=0V VGS=±8V, VDS=0V 250A, VDS=VGS VGS= 4.5V, 1.0A VGS= 2.5V, 0.6A VGS= 1.8V, 0.3A VDS= 10V, 1.0A VDS= 10V, VGS=0V f=1MHz
Ciss Coss Crss td(on) td(off)
Input capacitance Output capacitance Reverse transfer capacitance Switching
Turn-on-delay time Rise time Turn-off delay time Fall time Gate Charge Total Gate charge Gate-Source charge Gate Drain charge Source-drain diode Diode forward voltage Reverse recovery time Reverse recovery charge
12.7
VDD= 10V,VGS=4.5V
0.41 0.56
VDS= 10V, VGS= 4.5V 2.4A
0.75
0.95
Tj=25°C, 1.0A, VGS=0V 25°C, 1.24A di/dt 100A/µs
NOTES: Measured under pulsed conditions. Pulse width 300s; duty cycle Switching characteristics independent operating junction temperature. design only, subject production testing.
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Typical Characteristics
25°C
4.5V 1.5V
150°C
4.5V
2.5V 1.5V
Drain Current
Drain Current
2.5V
0.5V
Drain-Source Voltage
0.01
Output Characteristics
Drain-Source Voltage
Output Characteristics
4.5V
Normalised RDS(on) VGS(th)
Drain Current
150°C
RDS(on)
0.01
25°C
VGS(th) 250uA
1E-3
Gate-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance
25°C
Normalised Curves Temperature
Reverse Drain Current
150°C
1.5V
25°C
2.5V 3.5V 4.5V
Drain Current
0.01
On-Resistance Drain Current
Source-Drain Voltage Source-Drain Diode Forward Voltage
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Gate-Source Voltage
Capacitance (pF)
CISS
1MHz
COSS CRSS
Drain Source Voltage Capacitance Drain-Source Voltage
Charge (nC) Gate-Source Voltage Gate Charge
Test Circuits
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Packaging details SOT236
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com
ZXMN2088DE6
Definitions
Product change Diodes Incorporated reserves right alter, without notice, specifications, design, price conditions supply product service. Customers solely responsible obtaining latest relevant information before placing orders. Applications disclaimer circuits this design/application note offered design ideas. responsibility user ensure that circuit user's application meets with user's requirements. representation warranty given liability whatsoever assumed Diodes with respect accuracy such information, infringement patents other intellectual property rights arising from such otherwise. Diodes does assume legal responsibility will held legally liable (whether contract, tort (including negligence), breach statutory duty, restriction otherwise) damages, loss profit, business, contract, opportunity consequential loss these circuit applications, under circumstances. Life support Diodes Zetex products specifically authorized critical components life support devices systems without express written approval Chief Executive Officer Diodes Incorporated. used herein: Life support devices systems devices systems which: intended implant into body support sustain life whose failure perform when properly used accordance with instructions provided labeling reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device affect safety effectiveness. Reproduction product specifications contained this publication issued provide outline information only which (unless agreed company writing) used, applied reproduced purpose form part order contract regarded representation relating products services concerned. Terms Conditions products sold subjects Diodes Inc. terms conditions sale, this disclaimer (save event conflict between when terms contract shall prevail) according region, supplied time order acknowledgement. latest information technology, delivery terms conditions prices, please contact your nearest Zetex sales office. Quality product Diodes Zetex Semiconductors Limited 9001 TS16949 certified semiconductor manufacturer. ensure quality service products strongly advise purchase parts directly from Diodes regionally authorized distributors. complete listing authorized distributors please visit: www.zetex.com www.diodes.com Diodes Zetex Semiconductors does warrant accept liability whatsoever respect parts purchased through unauthorized sales channels. (Electrostatic discharge) Semiconductor devices susceptible damage ESD. Suitable precautions should taken when handling transporting devices. possible damage devices depends circumstances handling transporting, nature device. extent damage vary from immediate functional parametric malfunction degradation function performance over time. Devices suspected being affected should replaced. Green compliance Diodes Zetex Semiconductors committed environmental excellence aspects operations which includes meeting exceeding regulatory requirements with respect hazardous substances. Numerous successful programs have been implemented reduce hazardous substances and/or emissions. Diodes Zetex components compliant with RoHS directive, through this supporting customers their compliance with WEEE directives. Product status key: "Preview" "Active" "Last time (LTB)" "Not recommended designs" "Obsolete" Datasheet status key: "Draft version" "Provisional version" "Issue" Europe Zetex GmbH Kustermann-park D-81541 Germany Telefon: (49) Fax: (49) europe.sales@zetex.com Future device intended production some point. Samples available Product status recommended designs Device will discontinued last time period delivery effect Device still production support existing designs production Production been discontinued This term denotes very early datasheet version contains highly provisional information, which change manner without notice. This term denotes pre-release datasheet. provides clear indication anticipated performance. However, changes test conditions specifications occur, time without notice. This term denotes issued datasheet containing finalized specifications. However, changes specifications occur, time without notice. Americas Zetex Veterans Memorial Highway Hauppauge, 11788 Telephone: 2222 Fax: 8222 usa.sales@zetex.com Asia Pacific Diodes Zetex (Asia) Limited 3701-04 Metroplaza Tower Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 Fax: (852) 24250 asia.sales@zetex.com Corporate Headquarters Diodes Incorporated 15660 Dallas Parkway Suite 850, Dallas 75248,
www.diodes.com
Issue June 2008
Diodes Incorporated 2008
www.zetex.com www.diodes.com

Summary V(BR)DSS RDS(on) 0.200 VGS= 4.5V 0.240 VGS

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