Quadruple Circuits Capable Driving High-Capacitance Loads High Speeds

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Quadruple Circuits Capable Driving High-Capacitance Loads High Speeds

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SN75374 QUADRUPLE MOSFET DRIVER
Quadruple Circuits Capable Driving High-Capacitance Loads High Speeds Output Supply Voltage Range From Standby Power Dissipation VCC3 Supply Maximizes Output Source Voltage
PACKAGE (TOP VIEW)
description
SN75374 quadruple NAND interface circuit designed drive power MOSFETs from inputs. provides high current voltage necessary drive large capacitive loads high speeds. outputs switched very close VCC2 supply rail when VCC3 about higher than VCC2. VCC3 also tied directly VCC2 when source voltage requirements lower. SN75374 characterized operation from 70°C.
VCC2
VCC1 VCC3
schematic (each driver)
VCC1 Other Drivers VCC3 VCC2
Input Enable Enable Output
logic symbol
Other Drivers
TTL/MOS
logic diagram (positive logic)
TTL/MOS
(7-48)
This symbol accordance with ANSI/IEEE 91-1984 Publication 617-12
PRODUCTION DATA information current publication date. Products conform specifications terms Texas Instruments standard warranty. Production processing does necessarily include testing parameters.
Copyright 1986, Texas Instruments Incorporated
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SN75374 QUADRUPLE MOSFET DRIVER
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range VCC1 (see Note Supply voltage range VCC2 Supply voltage range VCC3 Input voltage Peak output current duty cycle 50%) Continuous total power dissipation Dissipation Rating Table Operating free-air temperature range 70°C Storage temperature range 65°C 150°C Lead temperature (1/16 inch) from case seconds 260°C
NOTE Voltage values with respect network ground terminal. DISSIPATION RATING TABLE PACKAGE 25°C POWER RATING 1150 DERATING FACTOR ABOVE 25°C mW/°C mW/°C POWER RATING
recommended operating conditions
Supply voltage, VCC1 Supply voltage, VCC2 Supply voltage, VCC3 Voltage difference between supply voltages: VCC3 VCC2 High-level input voltage, Low-level input voltage, High-level output current, High-level output current, Operating free-air temperature, 4.75 4.75 VCC2 5.25 UNIT
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
electrical characteristics over recommended ranges VCC1, VCC2, VCC3, operating free-air temperature (unless otherwise noted)
PARAMETER Input clamp voltage TEST CONDITIONS VCC3 VCC2 VCC3 VCC2 VCC3 VCC2, VCC3 VCC2, VCC2 VCC1 5.25 inputs VCC2 load VCC3 VCC1 5.25 inputs VCC2 load VCC3 VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 VCC2 0.15 0.25 0.25 0.25 VCC1 5.25 inputs VCC2 load VCC3 0.25 UNIT
High-level output voltage
ICC1(H) ICC2(H) ICC3(H) ICC1(L) ICC2(L) ICC3(L) ICC2(H) ICC3(H)
Low-level output voltage Output clamp-diode forward voltage Input current maximum input voltage High-level input current low-level input current
Supply current from VCC1, outputs high Supply current from VCC2, outputs high Supply current from VCC3, outputs high Supply current from VCC1, outputs Supply current from VCC2, outputs Supply current from VCC1, outputs Supply current from VCC2, outputs high Supply current from VCC3, outputs high Supply current from VCC2, standby condition Supply current from VCC3, standby condition
ICC2(S) ICC3(S)
VCC1 inputs
VCC2 load
VCC3
typical values VCC1 VCC2 VCC3 25°C except which VCC2 VCC3 stated under test conditions.
switching characteristics, VCC1 VCC2 VCC3 25°C
PARAMETER tDLH tDHL tPLH tPHL tTLH tTHL Delay time, low-to-high-level output Delay time, high-to-low-level output Propagation delay time, low-to-high-level output Propagation delay time, high-to-low-level output Transition time, low-to-high-level output Transition time, high-to-low-level output Figure TEST CONDITIONS UNIT
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
PARAMETER MEASUREMENT INFORMATION
Input
VCC1 VCC2 VCC3 Output (see Note
Pulse Generator (see Note
TEST CIRCUIT
VCC2
Input
VCC2 Output
VOLTAGE WAVEFORMS
Figure Test Circuit Voltage Waveforms, Each Driver
NOTES: pulse generator following characteristics: MHz, includes probe capacitance.
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE HIGH-LEVEL OUTPUT CURRENT
VCC2 High-Level Output Voltage High-Level Output Voltage VCC2
HIGH-LEVEL OUTPUT VOLTAGE HIGH-LEVEL OUTPUT CURRENT
VCC1 VCC2 VCC3
70°C
25°C 70°C
VCC1 VCC2 VCC3
0.01
High-Level Output Current
Figure
LOW-LEVEL OUTPUT VOLTAGE LOW-LEVEL OUTPUT CURRENT
Low-Level Output Voltage VCC1 VCC2 VCC3
70°C
Output Voltage
Low-Level Output Current
Figure
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DALLAS, TEXAS 75265
0.01
High-Level Output Current
Figure
VOLTAGE TRANSFER CHARACTERISTICS
VCC1 VCC2 VCC3 25°C Load Input Voltage
Figure
SN75374 QUADRUPLE MOSFET DRIVER
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME LOW-TO-HIGH-LEVEL OUTPUT FREE-AIR TEMPERATURE
ttPLH Propagation Delay Time, Low-to-High-Level Output Free-Air Temperature 1000 VCC1 VCC2 VCC3 Figure 4000 ttPLH Propagation Delay Time, High-to-Low-Level Output 1000 Free-Air Temperature VCC1 VCC2 VCC3 Figure 4000
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT FREE-AIR TEMPERATURE
2000
2000
Figure
PROPAGATION DELAY TIME LOW-TO-HIIGH-LEVEL OUTPUT VCC2 SUPPLY VOLTAGE
ttPLH Propagation Delay Time, Low-to-High-Level Output 2000 VCC2 Supply Voltage 1000 VCC1 VCC3 VCC2+ 25°C Figure 4000 ttPLH Propagation Delay Time, High-to-Low-Level Output
Figure
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT VCC2 SUPPLY VOLTAGE
VCC1 VCC3 VCC2+ 4000 25°C Figure
2000 VCC2 Supply Voltage 1000
Figure
Figure
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME LOW-TO-HIGH-LEVEL OUTPUT LOAD CAPACITANCE
ttPLH Propagation Delay Time, Low-to-High-Level Output 1000 2000 3000 4000 Load Capacitance VCC1 VCC2 VCC3 25°C Figure ttPLH Propagation Delay Time, High-to-Low-Level Output 1000 2000 3000 4000 Load Capacitance VCC1 VCC2 VCC3 25°C Figure
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT LOAD CAPACITANCE
Figure
POWER DISSIPATION (ALL DRIVERS) FREQUENCY
VCC1 VCC2 VCC3 Input: Square Wave (50% duty cycle) 25°C 1000 2000 4000
Figure
Power Dissipation
2000 1800 1600 1400 1200 1000
Frequency
1000
Figure
NOTE: operation with 2000 violates absolute maximum current rating.
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
APPLICATION INFORMATION driving power MOSFETs
drive requirements power MOSFETs much lower than comparable bipolar power transistors. input impedance consists reverse biased junction that described large capacitance parallel with very high resistance. this reason, commonly used open-collector driver with pullup resistor satisfactory high-speed applications. Figure 13(a), IRF151 power MOSFET switching inductive load driven open-collector transistor driver with 470- pullup resistor. input capacitance (CISS) specification IRF151 4000 maximum. resulting long turn-on time product input capacitance pullup resistor shown Figure 13(b).
-VOL Gate Voltage
IRF151
TLC555
SN75447
Figure Power MOSFET Drive Using SN75447 faster, more efficient drive circuit uses active pull-up well active pull-down output configuration, referred totem-pole output. SN75374 driver provides high-speed totem-pole drive desired application this type, Figure 14(a). resulting faster switching speeds shown Figure 14(b).
-VOL Gate Voltage
SN75374 IRF151
Figure Power MOSFET Drive Using SN75374
POST OFFICE 655303
DALLAS, TEXAS 75265
TLC555
Time
Time
SN75374 QUADRUPLE MOSFET DRIVER
APPLICATION INFORMATION
Power MOSFET drivers must capable supplying high peak currents achieve fast switching speeds shown equation
where capacitive load, desired rise time. voltage that capacitance charged circuit shown Figure 14(a), found equation Peak current required maintain rise time circuit Figure 14(a)
0)4(10 100(10
Circuit capacitance ignored because very small compared input capacitance IRF151. With assuming worst-case conditions, gate drive voltage applications which full voltage VCC2 must supplied MOSFET gate, VCC3 should least higher than VCC2.
THERMAL INFORMATION power dissipation precautions
Significant power dissipated SN75374 driver when charging discharging high-capacitance loads over wide voltage range high frequencies. Figure shows power dissipated typical SN75374 function frequency load capacitance. Average power dissipated this driver derived from equation PT(AV) PDC(AV) PC(AV) PS(AV) where PDC(AV) steady-state power dissipation with output high low, PC(AV) power level during charging discharging load capacitance, PS(AV) power dissipation during switching between high levels. None these include energy transferred load averaged over full cycle. power components driver channel
DC(AV)
C(AV)
PLtL
S(AV)
PHLt
Figure Output Voltage Waveform where times defined Figure
POST OFFICE 655303
DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
THERMAL INFORMATION
PLH, respective instantaneous levels power dissipation, load capacitance. voltage across load capacitance during charge cycle shown equation PS(AV) ignored power calculations frequencies. following power calculation, four channels operating under identical conditions: MHz, 19.9 0.15 with VCC1 VCC2 VCC3 19.75 1000 duty cycle 60%. 2000 PS(AV) negligible ignored. When output voltage low, ICC2 negligible ignored. per-channel basis using data sheet values, DC(AV)
2.24mA
(0.6)
(0.4)
PDC(AV) 58.2 channel Power during charging time load capacitance PC(AV) (1000 (19.75 (0.2 MHz) channel Total power each driver PT(AV) 58.2 136.2 total package power PT(AV) (136.2) 544.8
3-10
POST OFFICE 655303
DALLAS, TEXAS 75265
IMPORTANT NOTICE Texas Instruments (TI) reserves right make changes products discontinue semiconductor product service without notice, advises customers obtain latest version relevant information verify, before placing orders, that information being relied current. warrants performance semiconductor products related software specifications applicable time sale accordance with TI's standard warranty. Testing other quality control techniques utilized extent deems necessary support this warranty. Specific testing parameters each device necessarily performed, except those mandated government requirements. Certain applications using semiconductor products involve potential risks death, personal injury, severe property environmental damage ("Critical Applications"). SEMICONDUCTOR PRODUCTS DESIGNED, INTENDED, AUTHORIZED, WARRANTED SUITABLE LIFE-SUPPORT APPLICATIONS, DEVICES SYSTEMS OTHER CRITICAL APPLICATIONS. Inclusion products such applications understood fully risk customer. products such applications requires written approval appropriate officer. Questions concerning potential risk applications should directed through local sales office. order minimize risks associated with customer's applications, adequate design operating safeguards should provided customer minimize inherent procedural hazards. assumes liability applications assistance, customer product design, software performance, infringement patents services described herein. does warrant represent that license, either express implied, granted under patent right, copyright, mask work right, other intellectual property right covering relating combination, machine, process which such semiconductor products services might used.
Copyright 1995, Texas Instruments Incorporated

Quadruple Circuits Capable Driving High-Capacitance Loads High Speeds

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