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SN75374 QUADRUPLE MOSFET DRIVER

Quadruple Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range From 5 V to 24 V Low Standby Power Dissipation VCC3 Supply Maximizes Output Source Voltage

SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
Quadruple Circuits Capable of Driving High-Capacitance Loads at High Speeds Output Supply Voltage Range From 5 V to 24 V Low Standby Power Dissipation VCC3 Supply Maximizes Output Source Voltage
D OR N PACKAGE (TOP VIEW)
description
The SN75374 is a quadruple NAND interface circuit designed to drive power MOSFETs from TTL inputs. It provides the high current and voltage necessary to drive large capacitive loads at high speeds. The outputs can be switched very close to the VCC2 supply rail when VCC3 is about 3 V higher than VCC2. VCC3 can also be tied directly to VCC2 when the source voltage requirements are lower. The SN75374 is characterized for operation from 0°C to 70°C.
VCC2 1Y 1A 1E1 1E2 2A 2Y GND
VCC1 4Y 4A 2E2 2E1 3A 3Y VCC3
schematic (each driver)
VCC1 To Other Drivers VCC3 VCC2
Input A Enable E1 Enable E2 Output Y
logic symbol
1E1 1E2 2E1 2E2 1A 2A 3A 4A
To Other Drivers
logic diagram (positive logic)
1E1 1E2 2E1 2E2 1A
TTL / MOS
This symbol is in accordance with ANSI / IEEE Std 91-1984 and IEC Publication 617-12
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
recommended operating conditions
MIN Supply voltage, VCC1 Supply voltage, VCC2 Supply voltage, VCC3 Voltage difference between supply voltages: VCC3 - VCC2 High-level input voltage, VIH Low-level input voltage, VIL High-level output current, IOH High-level output current, IOL Operating free-air temperature, TA 0 4.75 4.75 VCC2 0 2 0.8 - 10 40 70 NOM 5 20 24 4 MAX 5.25 24 28 10 UNIT V V V V V V mA mA °C
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
electrical characteristics over recommended ranges of VCC1, VCC2, VCC3, and operating free-air temperature (unless otherwise noted)
High-level output voltage Hi h l l l
VOL VF II IIH IIL ICC1(H) ICC2(H) ICC3(H) ICC1(L) ICC2(L) ICC3(L) ICC2(H) ICC3(H)
Low-level output voltage Output clamp-diode p p forward voltage Input current at p maximum input voltage High-level g input current low-level input current Any A Any E Any A Any E
Supply current from pp y VCC1, all outputs high Supply current from pp y VCC2, all outputs high Supply current from pp y VCC3, all outputs high Supply current from pp y VCC1, all outputs low Supply current from pp y VCC2, all outputs low Supply current from pp y VCC1, all outputs low Supply current from pp y VCC2, all outputs high Supply current from VCC3, all outputs high Supply current from pp y VCC2, standby condition Supply current from pp y VCC3, standby condition
ICC2(S) ICC3(S)
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
PARAMETER MEASUREMENT INFORMATION
5V Input 24 V 20 V
Pulse Generator (see Note A) 2.4 V
TEST CIRCUIT
VCC2 - 2 V Output 2V
2V VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT
VCC2 VOH - High-Level Output Voltage - V VOH VOH - High-Level Output Voltage - V VOH VCC2
HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT
IOH - High-Level Output Current - mA
Figure 2
LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT
VO VO - Output Voltage - V
0 0 20 40 60 80 100 IOL - Low-Level Output Current - mA
Figure 4
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
IOH - High-Level Output Current - mA
Figure 3
VOLTAGE TRANSFER CHARACTERISTICS
Figure 5
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME LOW-TO-HIGH-LEVEL OUTPUT vs FREE-AIR TEMPERATURE
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT vs FREE-AIR TEMPERATURE
Figure 6
PROPAGATION DELAY TIME LOW-TO-HIIGH-LEVEL OUTPUT vs VCC2 SUPPLY VOLTAGE
Figure 7
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT vs VCC2 SUPPLY VOLTAGE
Figure 8
Figure 9
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME LOW-TO-HIGH-LEVEL OUTPUT vs LOAD CAPACITANCE
PROPAGATION DELAY TIME HIGH-TO-LOW-LEVEL OUTPUT vs LOAD CAPACITANCE
Figure 10
POWER DISSIPATION (ALL DRIVERS) vs FREQUENCY
Figure 11
PT - Power Dissipation - mW PD
40 70 100 200 f - Frequency - khz
Figure 12
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
APPLICATION INFORMATION driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup resistor is not satisfactory for high-speed applications. In Figure 13(a), an IRF151 power MOSFET switching an inductive load is driven by an open-collector transistor driver with a 470- pullup resistor. The input capacitance (CISS) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the product of input capacitance and the pullup resistor is shown in Figure 13(b).
M VOH -VOL - Gate Voltage - V VOH VOl
IRF151
TLC555 2 1
5 1 / 2 SN75447
Figure 13. Power MOSFET Drive Using SN75447 A faster, more efficient drive circuit uses an active pull-up as well as an active pull-down output configuration, referred to as a totem-pole output. The SN75374 driver provides the high-speed totem-pole drive desired in an application of this type, see Figure 14(a). The resulting faster switching speeds are shown in Figure 14(b).
48 V 5V M VOH -VOL - Gate Voltage - V VOH VOl 4
8 3 5 1 / 4 SN75374 IRF151
Figure 14. Power MOSFET Drive Using SN75374
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TLC555
1.5 (b)
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
APPLICATION INFORMATION
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as shown by the equation I PK
0)4(10 + (3 100(10 ) 9) + 120 mA 9
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151. With a VCC of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V. For applications in which the full voltage of VCC2 must be supplied to the MOSFET gate, VCC3 should be at least 3 V higher than VCC2.
THERMAL INFORMATION power dissipation precautions
+ DC(AV)
C(AV)
) PLtL
+ S(AV)
) PHLt HL
Figure 15. Output Voltage Waveform where the times are as defined in Figure 15.
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
SN75374 QUADRUPLE MOSFET DRIVER
SLLS025 - D3004, SEPTEMBER 1986
THERMAL INFORMATION
) (20 V) 2.2 mA ) (24 V) 2.24mA 4
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265