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PerkinElmer Optoelectronics
PerkinElmer Optoelectronics provides Sensor, Lighting Digital Imaging technologies speed development breakthrough applications customers industrial, safety security, consumer biomedical markets. PerkinElmer Optoelectronics recognized established supplier high performance semiconductor emitters detectors their associated electronic circuits subsystems advanced applications such industrial, medical, scientific instrumentation, test equipment, laser range finding, optical target designation tracking, weapons fire simulation, high-volume commercial applications. core competencies include wafer processing (MOCVD, VPE, with GaAs based materials), hybrid chip-on-board assembly, high performance analog receiver design custom development testing. PerkinElmer's modern emitter detector research, development manufacturing facilities among most advanced kind. Staffed experienced team scientists, engineers specialist support staff, they incorporate extensive clean room fabrication test areas. Operating under strict PerkinElmer Quality Reliability Assurance system, manufacturing sites qualified meet most stringent certification levels industry, including ISO-9001 -14001, TSI16949 "Class certification. With in-house sensor design vertically integrated manufacturing, PerkinElmer sells more than million optical sensors each year
Consistent with PerkinElmer Optoelectronics' policy continually updating improving products, type designation data subject change, unless otherwise arranged. obligations assumed notice change future manufacture these devices materials. Copyright©2006 PerkinElmer Otpoelectronics. rights reserved. PerkinElmer logo design registered trademarks PerkinElmer, Inc. SLiKis trademark PerkinElmer Inc. subsidiaries, United States other countries. other trademarks owned PerkinElmer, Inc. subsidiaries that depicted herein property their respective owners. Information furnished PerkinElmer Otpoelectronics believed accurate reliable. However, responsibility assumed PerkinElmer Optoelectronics use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent right PerkinElmer, Inc.
table contents
Emitters
Surface Emitting LEDs High Energy Laser Diodes 980nm Pulsed Laser Diodes (Specialty) Pulsed Laser Diodes 850nm Series Pulsed Laser Diodes 905nm Series Plastic Pulsed Laser Diodes 905nm PGEW Series Pulsed Laser Diodes 1550nm Series Emitter Drawings 21-23
Detectors
Silicon Photodiodes Avalanche Photodiode Guidelines Silicon Avalanche Photodiodes TE-Cooled Silicon Avalanche Photodiodes Lightpipe Silicon Avalanche Photodiodes Radiation Detection Avalanche Photodiodes NIR-Enhanced Silicon Avalanche Photodiodes Single Photon Counting Avalanche Photodiodes Modules Preamplifer Module Guidelines Silicon Modules Bandwidth Silicon Modules High Bandwidth Indium Gallium Arsenide Photodiodes Indium Gallium Arsenide Avalanche Photodiodes Product Photos Detector Drawings 9-10 18-20 24-32
Emitters
Surface Emitting LEDs
C30116/F InGaAs 1060 device offered with lensed flat TO-18 package. pulsed operation possible. These device types suitable optical fiber coupled applications their large emitting areas. Both types qualified most stringent military industrial quality performance specifications.
Surface Emitting LEDs 1060
Pulse Operated Type Standard Package Center Wavelength (nm) 1060 1060 Forward Current (CW) (mA) Output Power Forward Current (CW) (µW) (Pulsed) Typical Characteristics Output Power (Pulsed) (mW) Pulse Width (ns) Response Time (ns)
C30116 C30116F
Typical Applications
1060 Nd:YAG simulation, including receiver calibration.
High Energy Laser Diodes, Quasi Lasers
These devices have been designed specifically meet demanding requirements laser initiated ordnance (LIO) applications. Product offerings include TO-style package miniDIL pigtailed package equipped with rear facet monitor photodiode 100/140 optical fiber. laser chip employs advanced epitaxial materials processing techniques, providing reliable high optical power output capability significant power retention elevated temperatures. Alternate package outlines fiber-optic core diameters considered custom basis.
Quantum Well Types
Quasi Operated Part Standard Package Peak Output Power Peak Forward Current If(A) Pulse Width (ms) Maximum Duty Factor Response Time (ns) Typical Characteristics Beam Divergence (deg.) Fiber Optic Core/ Clad Dia. (µm) 100/140 200/240
C86118E C86155E-10 C86159E-09
Typical Applications
Laser initiated ordnance.
Pulsed Laser Diodes Specialty Products
These devices range wavelength from 1300 produced using Vapor Phase Epitaxial (VPE) Liquid Phase Epitaxial (LPE) growth techniques. Fiber-optic pigtailed devices employ advanced fiber alignment process yielding highly stable fiber laser diode positioning. Alternative packages fiber-optic core diameters supplied custom basis.
Double Heterostructure Quantum Well Types 1064 1300
Pulse Operated
Part C86153E-12 C86119E C86120E-10 Standard Package Wavelength (nm) 1064 1064 Peak Output Power Peak Forward Current Pulse Width (ns) Maximum Duty Factor
Typical Characteristics
Beam Divergence (deg.) Fiber Optic Core/ Clad Dia. (µm) 62.5/125 100/140
Typical Applications
Fiber-optic instrumentation, laser simulation, range determination OTDR.
Emitters
Pulsed Laser Diodes Series
This series devices employs elements from wide single sources three stacks wide elements producing peak optical output power respectively. laser diode structure fabricated using MOCVD epitaxial growth technique. This gaseous phase process which provides very precise control crystal layers that near theoretical device performance realized. These laser diodes designed provide narrow farfield emission plane perpendicular junction while maintaining typically slope efficiency. Standard package outlines include "C", "S". Other package types considered upon special request.
Multiple Quantum Well Types
Pulse Operated Part Preferred Package Peak Output Power Peak Forward Current If(A) Pulse Width (ns) Maximum Duty Factor 0.025 0.025 0.025 0.025 0.025 0.025 0.025 Response Time (ns) Typical Characteristics Beam Divergence (deg.) FWHM Number Diode Elements
PFAS1S03 PFAS1S09 PFAS1S12 PFAS1S16 PFAS2S09 PFAS2S12 PFAS3S12
Typical Applications
Laser range finding, LIDAR optical fusing.
Pulsed Laser Diodes Series
Advanced MOCVD grown multiple quantum well types with strained InGaAs active regions enhance temperature performance reliability. Peak output powers range from when operated pulse width. Significant increases peak power attainable shorter pulse widths. Package options this series include packages. Other packages carry price premiums and/or longer lead times.
Multiple Quantum Well Types
Pulse Operated Part PGAS1S03 PGAS1S06 PGAS1S09 PGAS1S12 PGAS1S16 PGAS1S24 PGAS3S06 PGAS3S09 PGAS3S12 PGAS4S12 PGAS4S16 Preferred Package Peak Output Power Peak Forward Current Pulse Width (ns) Maximum Duty Factor Response Time (ns) Typical Characteristics @T=22° Beam Divergence (deg.) Number Diode Elements
Typical Applications
Laser range finding, LIDAR, optical fusing, high speed switching, weapons simulation laser scanning.
Emitters
Pulsed Laser Diodes PGEW Series
This series laser diodes specifically designed address high-volume low-cost requirements primarily commercial applications. They produce high peak output power ideally suited light duty factor requirements. laser diode chips employed here modified versions standard advanced multiple quantum well design found series. center wavelength operation (905 well-matched peak response detectors complements cost (C30724 C30737) series. Devices offered convenient cost plastic encapsulated package. This packaging technique does yield hermetic assembly limited heat sinking capabilities therefore appropriate applications requiring operation extreme temperatures high humidity.
Multiple Quantum Well Types
Pulse Operated Part PGEW1S03 PGEW1S09 PGEW2S09 PGEW3S09 Standard Package Peak Output Power Peak Forward Current Pulse Width (ns) Maximum Duty Factor 0.0075 0.0075 0.0075 0.0075 Typical Characteristics Beam Divergence (deg.) Number Diode Elements
Typical Applications
LIDAR, intrusion alarms, laser range finding.
Pulsed Laser Diodes 1550 Series
MOCVD grown double heterostructure laser diodes 1550 with peak output powers offered standard products. wavelength these devices centered 1550 take advantage increase over AlGaAs InGaAs lasers maximum permitted emission levels eye-safe operation with respect requirements. Class operation therefore should possible with relatively high output powers.
Double Heterostructure Types 1550
Pulse Operated
Part PVGR1S06 PVGS1S06 PVGR2S06 PVGS2S06 PVGR4S12 Standard Package Peak Output Power Peak Forward Current Pulse Width (ns) Maximum Duty Factor 0.05 0.05 0.025 0.025 0.025 Response Time (ns)
Typical Characteristics
Beam Divergence (deg.) Number Diode Elements
Typical Applications
Eye-safe range finding weapons simulation.
Detectors
Silicon Photodiodes Window Fiber-Optic Packages, Fast Response Time 1100
C30971 high-speed, P-type device designed fiber-optic free space applications 1100 wavelength range.
Packages
This photodiode offered standard TO-18 package) with window well TO-18 equipped with lightpipe (D7). packages connectorized facilitate fiber-optic connections. Fiber-optic receiver modules using this photodiode available custom basis.
Photodiodes Window Fiber-Optic Packages, Fast Response
Part Standard Photo Sens. Resp. Dark Current Spect. Noise Package Diam. (mm) (A/W) (nA) Curr. Dens. (fW/Hz)
0.25 0.45 0.45
Typical Characteristics
Cap. Response Time Bias Volt (pF) (ns) (fW/Hz)
C30971E C30971EL C30971BST C30971BFC
Typical Applications
Fast laser pulse detection, fiber-optic communications, instrumentation, high-speed switching.
Silicon Photodiodes Enhanced, Noise 1100
series high-quality N-type photodiodes hermetically sealed packages designed 1100 wavelength region with enhanced operation range. These photodiodes operated photovoltaic mode (0-V bias) encounter very noise. Active areas circular rectangular also available bi-cell, dual-element quadrant configurations. standard devices (BQ) quartz window transmission below with coating Custom devices with coating also offered upon request.
Preamplifier Modules
series uses these photodiodes hybrid preamplifier modules.
Photodiodes Enhanced
Part Standard Photo Sens. Resp. Resp. Package Diam. (mm) (A/W) (A/W)
(rectang.) 2.5(circ.)(x2) (rect.)(x2) (square)(x4) 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.58 0.58 0.58 0.58 0.58 0.58 0.58
Typical Characteristics
Shunt Resis.
2000 1000 1000 1000 1000
Spect. Noise Curr. Dens. (fW/Hz)
Cap. (pF) (fA/Hz)
UV-040BQ UV-100BQ UV-215BQ UV-245BQ UV-100BQ DUAL UV-140BQ-2 Cell] UV-140BQ-4 [Quad]
Typical Applications
light meters, visible light meters, photometry, fluorescent light detection, spectroscopy, low-level light sensing, instrumentation.
Detectors
Silicon Epitaxial Photodiodes High Speed 1100
C30736 series high-speed epitaxial silicon photodetectors provide fast response good quantum efficiency spectral range between 1100 These devices optimized high-speed, high volume cost applications. Standard sizes include 0.25 custom sizes accomodated depending volume required. Available plastic surface mount packages chip form.
Silicon Epitaxial Photodiodes
Part Standard Photo Sens. Resp. Dark Current Spect. Noise Package Diam. (mm) (A/W) (nA) Curr. Dens. (fW/Hz)
Chip form Chip form Chip form 0.20 0.50 0.55 0.55 0.55 0.05 0.10 0.50
Typical Characteristics
Cap. Response Time Bias Volt (pF) (ns) (fW/Hz)
0.75
C30736-1 C30736-2 C30736-3
Silicon Photodiodes Standard N-Type 1100
C308XX series devices high-quality N-type photodiodes hermetically sealed packages designed 1100 wavelength region.
PINs Standard N-Type
Part Standard Photo Sens. Resp. Dark Current Spect. Noise Package Diam. (mm) (A/W) (nA) Curr. Dens. (fA/Hz)
11.4
Typical Characteristics
Cap. Response Time Bias Volt (pF) (ns) (fW/Hz)
C30807E C30808E C30822E C30809E C30810E
Typical Applications
Laser detection systems, photometry, data transmission, instrumentation, high-speed switching.
Silicon Photodiodes Large Area, Fast Response Time 1100
series devices high-quality, large-area, high-speed, N-type photodiodes hermetically sealed packages designed 1100 wavelength range. FND-100Q quartz window enhance responsivity.
Preamplifiers
Preamplifier modules incorporating these photodiodes available custom basis.
PINs Large Area, Fast Response
Part Standard Photo Sens. Resp. Dark Current Spect. Noise Package Diam. (mm) (A/W) (nA) Curr. Dens. (fW/Hz)
0.58 0.58 0.58 0.58
Typical Characteristics
Cap. Response Time Bias Volt (pF) (ns) (fW/Hz)
FFD-040B FFD-100 FFD-200 FND-100Q
Typical Applications
Laser detection systems, fast pulse detection, instrumentation, high-speed switching.
Detectors
Silicon Photodiodes Quadrant 1100
C30845E series high-quality N-type quadrant photodiode hermetically-sealed packages designed 1100 wavelength range. photodiode active area circular with four pie-shaped quadrant sections created from doping process. There "dead" space between elements. Each quadrant isolated signal lead. specifications quadrant element. devices described their respective device sections. spectral range 1100 except type which will respond least
Photodiodes Quadrant
Part Standard Photo Sens. Resp. Dark Current Spect. Noise Package Diam. (mm) (A/W) (nA) Curr. Dens. (fA/Hz)
11.4 (x4) 1.06 0.58
Typical Characteristics
Cap. Response Time Bias Volt (pF) (ns) (fW/Hz)
µsec
C30845E YAG-444-4A UV-140BQ-4
Typical Applications
Quadrant detectors used spot position tracking measurements directions either pulsed applications, laser spot tracking, positional measurements, instrumentation.
Silicon Photodiodes Near-IR Enhanced (1.064 1100
series high-quality P-type photodiodes hermetically sealed packages. These photodiodes perform well over 1100 wavelength range thicker material enhanced responsivity, making them ideal 1.064 detection applications. guard ring been implemented collect higher surface leakage current P-type detector. This also serves collect current generated outside active area, ensuring current will contribute noise. This advantageous applications when entire chip illuminated when nuclear particles outside active area could create noise. YAG-444-4A quadrant photodiode.
Photodiodes Near-IR Enhanced (1.064
Part
Typical Characteristics
Standard Photo Sens. Resp. 1060 Dark Current Spect. Noise Cap. Response Time 1060 Bias Volt Package Diam. (mm) (A/W) (nA) Curr. Dens. (pF) (ns) (fW/Hz) (fA/Hz)
11.3 11.4 Quad
YAG-100A YAG-200 YAG-444A YAG-444-4A [per element]
Typical Applications
Laser range finding, laser warning receivers, missile guidance systems.
Detectors
Avalanche Photodiodes Guidelines
When
APDs instead photodetectors will result improved sensitivity many applications. general, APDs useful applications where noise amplifier high i.e., much higher than noise photodetector. Thus, although always noisier than equivalent PIN, improved signal-to-noise achieved system gains point where noise comparable that amplifier. example, when system bandwidth high, amplifier noise high, likely useful. other hand, very bandwidth systems, noise amplifier likely very low, which case best choice. applications where background optical power falling detector very high, such operation detector daylight conditions with little filtering, useful, except perhaps gain, since multiplied noise background illumination will very high exceed that amplifier. These results seen from following equation system noise unit bandwidth:
Surface dark current Bulk dark current Optical power Unity gain responsivity Gain Excess noise factor
Where
value silicon given following expression:
1/M) Keff Effective ratio hole electron hole ionization coefficients
Where
multiplication increases, relative contribution surface current amplifier decreased, however, contribution multiplied dark illuminated currents increased. Since signal increases then seen from that detector contribution system noise, omitting term, proportional square root excess noise factor,
Temperature Effects Silicon APDs
There three main effects varying temperature silicon APDs. first effect components dark current, which vary exponentially according following expression:
I(T) (-qN/kT) Where
Activation energy Boltzman's constant Absolute temperature Kelvin activation energy, equal 0.55 bulk (multiplied) component dark current, while surface current (unmultiplied) found have activation energy about second main effect temperature variation operating voltage fixed value gain, which occurs variation ionization coefficients. fixed operating gain, required voltage increases higher temperatures, decreases lower temperatures. Alternatively, fixed operating voltage, gain decreases higher temperatures, increases lower temperatures. third effect quantum efficiency wavelengths near band edge silicon, particular 1064 effect decrease quantum efficiency lower temperatures conversely, increase quantum efficiency higher temperatures. first approximation, quantum efficiency 1064 most PerkinElmer's standard APDs, found vary about over their useful temperature range. Note: more information APDs, please request User's Guide from PerkinElmer Optoelectronics.
Detectors
Silicon Avalanche Photodiodes Standard Types 1100
PerkinElmer APDs very reliable, high-quality detectors hermetically sealed packages designed high speed responsivity 1100 wavelength range. "reach-through" structure provides very noise performance high gains. full range active areas available.
Special APDs
addition PerkinElmer standard-type APDs, other APDs tailored specific applications available (see specifications other sections). These include: cost APDs (C30724, C30737E) high-volume applications Enhanced APDs (C30954 Series) 1.064 detection Arrays (C30927, C30985) el., linear Radiation Detection (C30626, C30703) large area scintillator coupling C30902BST, BSC, connectorized packages Lightpipe Package (C30921E) efficient fiber coupling Photon Counting (SPCM series, C30902S, C30902S-TC DTC) ultra low-noise APDs modules
Preamplifiers
C30950 C30659 devices some these APDs bipolar hybrid preamplifier packages.
APDs Standard Types
Typical Characteristics Part Standard Package Photo Sens. Diam. (mm) Resp. Dark Curr. (A/W) (nA) Spect. Noise Curr. Dens. (pA/Hz) Cap. Resp. Time (pF) (ns) (fW/Hz) (@830 (@830 Range Specs.
C30902E C30902S C30817E C30916E C30872E
Typical Applications
Fluorescence detection, fast small signal detection, LIDAR, range finding, photon counting, data transmission, instrumentation, adaptive optics, confocal microscopes.
Detectors
Silicon Avalanche Photodiode Arrays Quadrant Linear 1100
arrays high-quality detectors hermetically sealed packages designed high speed responsivity 1100 wavelength range.
Element Separation
arrays monolithic chip structures with elements created from doping process. quadrant array, C30927, "dead space" between elements. linear array, C30985, high inter-electrode resistance with FWHM dead space between elements. Packages have common ground bias with separate lead each element output.
Quadrant APDs
quadrant versions, each tailored high response particular wavelength: C30927E-01: 1060 C30927E-02: C30927E-03:
Other Arrays
PerkinElmer Optoelectronics also specializes making custom linear monolithic arrays, with without hybrid preamplifiers.
Arrays
Part Elem Standard Package Photo Sens. Diam. (mm) (total) (total) (total) pitch Resp. (A/W) (@1060 (@900 (@800 (@900 Dark Curr. Spect.Noise Curr. (nA) Dens. (pA/Hz) Cap. (pF)
Typical Characteristics Resp. Time (ns) (fW/Hz) Range
C30927E-01 C30927E-02 C30927E-03 C30985E (linear)
(@1060 275-425 (@900 (@800 275-425 275-425
(@900 250-425
Typical Applications
LIDAR, spectroscopy, particle detection, adaptive optics, tracking systems.
Low-Cost High-Volume Avalanche Photodiodes
C30724 high-quality, low-gain designed high-volume applications. This device operates region where gain less sensitive temperature variations, allowing easy implementation without temperature compensation, rendering ideal applications where background flux large. C30737E type avalanche photodiode provides high gain, high responsivity between 1000 well extremely fast riseand-fall times wavelengths frequency response useful GHz.
Packaging
Hermetic TO-18, TO-18 with built-in filter, plastic encapsulated, plastic surface-mount packages also available.
APDs Low-Cost
Part Standard Photo Sens. Resp. Dark Curr. Package Diam. (mm) (A/W) (nA) (@M=15) (@M=15) (@800 M=100) (@800 M=100) Spect. Noise Curr. Dens. (pA/Hz)
Typical Characteristics Cap. Resp. Time Range (ns) M=15 (fW/Hz) [160 nominal] (pF) M=100) M=100)
C30724E (TO-18 Pkg) C30724P (Plastic Pkg) C30737E (TO-18 Pkg) C30737P (Plastic Pkg)
Typical Applications
Laser range finding, collision avoidance, optical communication systems.
Detectors
TE-Cooled Silicon Avalanche Photodiodes
C30902S available one-stage two-stage thermo-electric cooler. Cooling reduces thermal noise very small signal detection. integral thermistor used temperature monitoring cooler control.
Gain Control
breakdown voltage temperature dependent decreases with decreasing temperature. bias voltage kept constant, gain will increase with decreasing temperature. room temperature operating voltage supplied with each unit. cooler also used maintain constant temperature thus keep gain constant. Another method temperature compensation circuit, described preamplifier section.
Performance Improvement
Specifications below given one-stage cooler two-stage cooler. one-stage cooler will provide about performance improvement, two-stage cooler will provide about improvement.
Photon Counting
photon counting section Geiger-mode specifications.
APDs TE-Cooled
Typical Characteristics "-TC" "-DTC" Part Standard Package Photo Sens. Resp. Dark Curr. Diam. (mm) (A/W) (nA) Spect. Noise Cap. Resp. Time (ns) Curr. Dens. (pF) (pA/Hz) 0.04 0.02 (fW/Hz) 0.16 Range
C30902S-TC [one-stage] C30902S-DTC [two-stage]
-250 [temp.depend.] [temp.depend.]
Typical Applications
Small signal fluorescence, photon counting, fast weak signal detection, adaptive optics.
Fiber Coupled Lightpipe Silicon Avalanche Photodiodes
C30902 available fiber receptacle lightpipe packages.
Specifications
specifications C30902E C30902S standard section.
Part Numbers Packages
Receptacle: C30902BST pkg.) Receptacle: C30902BFC pkg.) Lightpipe: Lightpipe: C30921E (902E chip) pkg.) C30921S (902S chip) pkg.)
Typical Applications
Fiber-optic data transmission, remote sensing, small signal detection, OTDR.
Detectors
Radiation Detection Avalanche Photodiodes
These large area APDs flatpack packages either direct detection easy coupling scintillator crystals. C30703 enhanced blue wavelength response peak quantum efficiency C30626 uses standard structure peak detection about
Packages
These APDs packaged flatpacks with without windows ceramics. no-window devices detect direct radiation X-rays electrons energies listed, windowed packages best easy scintillator coupling. Packages designated follows: C30626F: flatpack window (Package C30703F: flatpack window (Package C30626G: flatpack window (Package C30703G: flatpack window (Package
Radiation Energies Detectable
This general guide detectable radiation energies. Consult with your specific application. Light: X-Rays: Electrons: Gamma: C30626: ~550 1100 C30626: C30626: Need scintillator crystal. C30703: 1100 C30703: C30703:
APDs Radiation Detection
Part Photo Sens. Diam. (mm) Resp. (A/W) Dark Curr. (nA) Spect. Noise Curr. Dens. (pA/Hz) Cap. (pF) Resp. Time (ns)
Typical Characteristics Peak (fW/Hz) Range Specs.
C30626 C30703
Silicon Avalanche Photodiodes NIR-Enhanced (1.064 1100
PerkinElmer NIR-enhanced APDs high-quality photodiodes hermetic packages designed high-speed responsivity 1100 wavelength region. patented chip process produces quantum efficiencies 1.064
Preamplifiers
C30659 series hybrid preamplifier modules which incorporate C30954, -955 -956 chips.
APDs NIR-Enhanced (1.064
Part Standard Package Photo Sens. Resp. 1060 (A/W) Diam. (mm) Dark Curr. (nA) Spect. Noise Curr. Dens. (pA/Hz) Cap. (pF)
Typical Characteristics Resp. Time (ns) 1060 (fW/Hz) Range Specs.
C30954E C30955E C30956E
Typical Applications
LIDAR, laser range finding, fluorescence detection, fast small signal detection.
Detectors
Single Photon Counting Avalanche Photodiodes Modules 1100
APDs with very noise currents operated Geiger mode, which means applied bias voltage above diode breakdown voltage, VBR. this mode, electron event will produce very large current flow, like pulse. After photo event, circuit will quench diode (stop avalanche process) temporarily lowering bias voltage below VBR. bias then raised again original value complete cycle. Single photon events detected from minimum count rates allowed background count maximum rates determined dead time quenching circuit.
Quenching
Quenching circuits range from simple passive quench resistive network active quench circuit built into Single Photon Counting Module (SPCM-AQR series). active quench circuit speeds discharge, allowing faster reset thus higher maximum counting rate. very basic quenching circuit described C30902 data sheet.
Modules
SPCM self-contained unit which requires only Volts complete operation. outputs level pulse each event. SPCM-AQ4C 4-channel photon counting card, detecting single photons light over wavelength range from 1060 Each channel independent from others. C30902S stand-alone available one-stage two-stage coolers without circuitry.
Detection Efficiency Background Count
Detection efficiency, probability detection [Pd], product quantum efficiency probability that electron event will trigger avalanche. quantum efficiency wavelength dependent, avalanche probability bias voltage dependent. While larger bias will increase detection efficiency, will also increase background count rate. There trade-off between detection efficiency background count rate. APDs used SPCMs rigorously selected achieve >70% However, C30902S-TC units, which less expensive stand-alone APDs coolers, tested with lower bias voltage thus have lower guaranteed 0.18 SLiKAPDs have peak detection efficiency APDs have peak detection efficiency
SPCM Features
input only Two-stage Cooler Cooler control circuit High-voltage bias Active quench circuit Output Gating Function
Options [consult data sheet]
SPCM-AQR-XX-FC: fiber receptacle SPCM-QC-X: jacketed fiber with connector.
Single Photon Counting Specifications APDs
Part SPCM-AQR-12 SPCM-AQR-13 SPCM-AQR-14 SPCM-AQR-15 SPCM-AQR-16* SPCM-AQ4C C30902S C30902S-TC oper.) C30902S-DTC oper.) SPCM-AQ4C Standard Package Photo Sens. Diam. (mm) 0.18 0.18 0.18 0.18 0.18 Fibered 0.475 0.475 0.475 Fibered Detect. Eff.@ Peak: [typ.] Dark Count Rate (c/s) =(DarkCnt Rt)] kc/s (typ) kc/s (typ) (typ) <500 Statistical Dark Count Var. (c/s) Typ. Count Rate Before Sat. (c/s) Dead Time (ns)[typ.] Pulse Width (ns)[typ.into 50W] *Subject availability.
Typical Applications
Small signal fluorescence, spectroscopy, confocal microscopes, adaptive optics, LIDAR photon correlation, drug discovery highthroughput sequencing.
Detectors
Preamplifier Modules Guidelines
Preamplifier modules hybrid devices with photodiode matching amplifier compact hermetic package. integral amplifier allows better ease noise bandwidth performance. pin, DIL, and/or fiber packaged modules available custom basis.
Selecting Preamp Module
Choose preamp module based following: Wavelength: Determines detector type. Bandwidth: Determines type amplifier. smaller bandwidth means less integrated noise. Smallest detector area that used. Min. Signal Level: Determines suitability photodiode signal-to-noise ratio using particular module. module generally used when photodiode module sufficient.
Noise: NEPRMS
Noise Equivalent Power (NEP) signal level which will produce signal-to-noise ratio (SNR) this catalogue, normalized bandwidth valid comparison devices, total noise bandwidth-dependent. known bandwidth (BW), good estimate total integrated device noise NEPRMS (W/Hz) Noise sources which will this will signal shot other electronics.
PerkinElmer Preamplifier Options
PerkinElmer APDs reliable, high-quality detectors hermetically-sealed packages designed high-speed responsivity 1100 wavelength range. "reach-through" structure utilized, providing very noise performance high gains. full range active areas available.
Silicon Modules Bandwidth 1100
series uses UV-enhanced photodiode with hybrid preamp hermetic package. HUV-1100 uses external feedback resistor bandwidth flexibility, while others have internal feedback resistor fixed bandwidth. bandwidth values listed HUV-1100 feedback resistor.
Windows
devices have quartz window transmission down
Modules Bandwidth
Part Standard Package Photo Sens. Diam. (mm) 11.3 Resp (MV/W) Spect. Noise Volt Dens. (µV/Hz) (pW/Hz) 0.17 0.02 0.08
Typical Characteristics Bandwidth (kHz) (into Bias Volt
HUV-1100BQ HUV-2000B HUV-4000B
Typical Applications
signal detection photometry instrumentation.
Detectors
Silicon Avalanche Photodiodes PreAmplifier Modules High Bandwidth 1100
These hybrid preamp modules using photodiode InGaAs hermetic packages. C30608E uses transimpedance amp. C30950E C30919E bipolar amps, while C30659 uses transimpedance amplifier.
Fiber-Optic Receivers
Custom connectorized packages available upon request.
Temperature Compensation
breakdown voltage temperature dependent decreases with decreasing temperature. bias voltage kept constant, gain will increase with decreasing temperature. C30919E temperature compensation circuit which uses internal thermistor automatically adjust bias voltage constant responsivity over wide temperature range. temperature range 1.06 versions this also available.
Modules High Bandwidth
Part Used C30971[Si PIN] C30817[Si APD] Standard Photo Sens. Resp Lin.Volt.Out. Package Diam. (mm) (kV/W) Swing 1000 Spec. Noise Volt. Dens. (nV/Hz)
Typical Characteristics (pW/Hz) 0.036 0.025 Bandwidth Phot. Diod. (MHz) Bias Volt into
C30608E C30950E
C30919E C30817[Si APD] [temp.compens.]
InGaAs Modules High Bandwidth
Part Chip
Typical Characteristics load
Optimum Standard Photo Sens. Resp. Lin.Volt.Out Spec. Noise Bandwidth Phot. Diod Resp. Package Diam. (mm) (kV/W) Swing Volt. Dens. (MHz) Bias Volt (nV/Hz) (W/Hz) 1060 1060 1550 1550 0.08 3000 180-260 275-435 275-425 275-425 40-70 40-70
C30659-900-R5B C30659-900-R8A C30659-1060-R8B C30659-1060-3A
C30902E APD] C30817E APD] C30954E APD] C30956E APD]
C30659-1550-R08B C30645E [InGaAs APD] C30659-1550-R2A C30662E [InGaAs APD]
Typical Applications
Range finding, instrumentation laser signal detection.
Note:
Bandwidths available both PINs APDs custom device basis.
Detectors
Indium Gallium Arsenide Photodiodes Fiber-Optic Window Packages 1700
These high-quality InGaAs photodiodes hermetically sealed fiber receptacle, ceramic packages designed 1700 wavelength region. Bare form also available volume application custom basis.
InGaAs PINs Small Area/Fiber-Optic
Part Standard Package ceramic ceramic ceramic ball lens D3,D4,D5recept. ceramic window D3,D4,D5recept. Photo Sens. Resp. (A/W) Dark Curr. Diam. (µm) 1300 1550 (nA) 0.86 0.86 0.86 0.80 0.75 0.86 0.86 0.75 0.95 0.95 0.95 0.90 0.85 0.95 0.95 0.85
Typical Characteristics Spect. Noise Bandwidth 1550 Bias Volt (pW/Hz) Curr. Dens. (pF) (GHz) [into (pA/Hz) <0.02 <0.02 <0.02 <0.02 <0.02 0.02 0.02 0.02 0.35 0.55 >3.5 <0.02 <0.02 <0.02 <0.02 <0.02 0.02 0.02 0.02
C30616E C30637E C30617E C30617B C30617BFC ST,SC C30618E C30618G C30618BFC ST-SC
Typical Small Area Device Applications
Telecommunications,data transmission, instrumentation, high-speed switching.
Typical Large Area Device Applications
Power meters, fiber-optic test measurement, instrumentation, eye-safe laser communications.
Indium Gallium Arsenide Photodiodes Fiber-Optic Window Packages Window Packages 1700
Devices with built-in cooler and/or amplifiers available custom basis. Detector chips ceramic carriers thermoelectric cooler TO-8 also available custom basis.
Large-Area InGaAs PINs
Part Standard Package Photo Sens. Diam. (mm) Resp. (A/W) 1300 1550 0.86 0.95 0.86 0.95 0.86 0.95 0.86 0.95 0.86 0.95
Typical Characteristics Dark Curr. 1300 Bandwidth Power Bias Volt (nA) (pW/Hz) (pF) (GHz) [into 0.15 Liniarity [dBm] 1000 2500 >+13 >+13
C30619G C30641G C30642G C30665G C30723G
Detectors
Indium Gallium Arsenide Avalanche Photodiodes Fiber-Optic Window Packages 1700
These high-quality InGaAs avalanche photodiodes (APDs) hermetically sealed fiber-optic packages designed 1700 wavelength range. These APDs available one-stage two-stage thermoelectric coolers custom basis. Cooling reduces thermal noise very small signal detection. integral thermistor used temperature monitoring cooler control.
Preamplifiers
C30645 C30662E available hybrid amplifier packages. section under C30659 series.
InGaAs APDs
Part Standard Package Photo Sens. Resp. (A/W) Dark Curr. Diam. (µm) 1300 1550 (nA)
Typical Characteristics Spect. Noise Bandwidth 1550 (pW/Hz) Curr. Dens. (pF) (GHz) [into (pA/Hz) 0.15 0.15 0.25 0.25 0.03 0.03 0.13 0.13 0.15 0.15 Bias Volt
C30644E ceramic C30644E C30645E C30662E window window window C30645E ceramic C30662E ceramic
Typical Applications
Telecommunications, data transmission, eye-safe laser range finding, OTDR, fiber-optic test measurement.
Detectors
Detectors
Emitters
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Emitters
Emitters
Package drawings reference only. reproduced actual size. Measures mm/inches.
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Emitters
Detectors
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Detectors
Detectors
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Detectors
Detectors
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Detectors
Detectors
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Detectors
Detectors
Package drawings reference only. reproduced actual size. Measurements mm/inches.
Optoelectronics Headquarters:
PerkinElmer Optoelectronics, 44370 Christy Street, Fremont, 94538-3180, (+1) 510-979-6500, (+1) 800-775-6786 (toll free), (+1) 510-687-1140, opto@perkinelmer.com North America Customer Support Hub, 22001 Dumberry Road, Vaudreuil-Dorion, Quebec, Canada (+1) 450-424-3300, (+1) 866-574-6786 (toll free), (+1) 450-424-3345, opto@perkinelmer.com
600120_01 CAT0506P
European Headquarters, Wenzel-Jaksch-Str. 65199 Wiesbaden, Germany (+49) 611-492-247, (+49) 611-492-170, opto.Europe@perkinelmer.com Asia Headquarters, Ayer Rajah Crescent #06-12, Singapore 139947 (+65) 6775-2022 (+65) 67704-366, (+65) 6775-1008, opto.Asia@perkinelmer.com
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