AO4408/L uses advanced trench technology provide excellent RDS(ON), ga

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AO4408/L uses advanced trench technology provide excellent RDS(ON), ga

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AO4408 N-Channel Enhancement Mode Field Effect Transistor
AO4408/L uses advanced trench technology provide excellent RDS(ON), gate charge fast switching. This device makes excellent high side switch notebook core DC-DC conversion. AO4408 AO4408L electrically identical. -RoHS Compliant -AO4408L Halogen Free
(VGS 10V) RDS(ON) (VGS 10V) RDS(ON) (VGS 4.5V) Tested Rg,Ciss,Coss,Crss Tested
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy L=0.3mH TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Maximum
Units
TA=25°C TA=70°C TSTG
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4408
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=12A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=10A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 10.5 0.76 1020 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.13 0.25 10.3 VGS=4.5V, VDS=15V, ID=12A VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=12A, dI/dt=100A/µs 19.2 12.5 1200 16.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. curve provides single pulse rating. current rating based junction ambient thermal resistance rating. Rev8: July 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) VGS=2.5V (Volts) On-Region Characteristics 25°C VGS(Volts) Figure Transfer Characteristics 125°C VDS=5V
4.5V 3.5V
ID=10A Normalized On-Resistance VGS=10V
RDS(ON)
VGS=4.5V
VGS=4.5V
VGS=10V
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 ID=10A RDS(ON) 125°C 1.0E+00 VGS=0V 125°C Figure On-Resistance Drain Current Gate Voltage
1.0E-01
1.0E-02 1.0E-03 25°C
25°C 1.0E-04
(Volts) Figure On-Resistance Gate-Source Voltage
1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
Capacitance (pF) (Volts) (Volts) Figure Capacitance Characteristics (nC) Figure Gate-Charge Characteristics VDS=15V ID=12A 1500 1250 1000 Coss Ciss
Crss
100.0 RDS(ON) limited 10.0 (Amps) 10µs 10ms 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs Power 0.001 TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
1000
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4408
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.00001 TA=25°C Power Dissipation
SteadyState
0.0001 Time avalanche, Figure Avalanche capability
0.001
TCASE (°C) Figure Power De-rating (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4408
Gate Charge Test Circuit Waveform
Charge
Resistive Switching Test Circuit Waveforms
d(on) d(off)
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
BVDSS
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO4408/L uses advanced trench technology provide excellent RDS(ON), ga

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