AO3403/L uses advanced trench technology provide excellent RDS(ON) gat

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AO3403/L uses advanced trench technology provide excellent RDS(ON) gat

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AO3403 P-Channel Enhancement Mode Field Effect Transistor
AO3403/L uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications.AO3403 AO3403L electrically identical. -RoHS Compliant -AO3403L Halogen Free
-30V -2.6 RDS(ON) 130m RDS(ON) 180m RDS(ON) 260m -10V) (VGS -10V) (VGS -4.5V) (VGS -2.5V) Rg,Ciss,Coss,Crss Tested
TO-236 (SOT-23) View
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead TA=25°C TA=70°C TSTG
Maximum -2.6 -2.2
Units
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3403
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, D=-2A VGS=-2.5V, D=-1A Forward Transconductance VDS=-5V, ID=-2.5A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -0.85 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.5A 1.32 VGS=-10V, VDS=-15V, RL=6, RGEN=3 IF=-2.5A, dI/dt=100A/µs 31.5 15.8 ±100 -1.4 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs IF=-2.5A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=500A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures 6,12,14 obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. 9:April, 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3403
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-10V -4.5V -ID(A) VGS=-3.5V -2.5V -2.0V -VDS (Volts) On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=-4.5V VGS=-10V VGS=-2.5V Normalized On-Resistance VGS=-10V Temperature (°C) Figure On-Resistance Junction Temperature ID=-2A VGS=-4.5V VGS=-2.5V -VGS(Volts) Figure Transfer Characteristics 125°C VDS=-5V 25°C
-VGS (Volts) Figure On-Resistance Gate-Source Voltage ID=-2A 125°C
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 -VSD (Volts) Figure Body-Diode Characteristics 25°C 125°C
RDS(ON)
25°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3403
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
-VGS (Volts) (nC) Figure Gate-Charge Characteristics VDS=-15V ID=-2.5A Capacitance (pF) Coss -VDS (Volts) Figure Capacitance Characteristics Crss Ciss
100.0
TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s 100µs 10ms 10µs
Power
(Amps)
10.0
TJ(Max)=150°C TA=25°C
-VDS (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1000
0.01 0.00001
0.0001 Pulse 0.001 Single
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO3403/L uses advanced trench technology provide excellent RDS(ON) gat

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