Dual 110A /500V OUTLINE DRAWING P2HM1102H Dimension(mm)

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Dual 110A /500V OUTLINE DRAWING P2HM1102H Dimension(mm)

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Dual FETs Separated Circuit
Dual 110A /500V
OUTLINE DRAWING
P2HM1102H
Dimension(mm) 108.0
Prevented Body Diodes MOSFETs SBDs, Ultra Fast Recovery Diodes Connected Parallel 300KHz High Speed Switching Possible
Circuit
TYPICAL APPLICATIONS
Power Supply Communications Induction Heating
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight 220g
Symbol
VDSS VGSS Tstg VISO FTOR
P2HM1102H
(Tc=25°C) (Tc=25°C) Tc=25°C) Tc=25°C) +150 +125 2000
Unit
Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals Base min.) Module Base Heatsink Mounting Torque Main Terminals
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition
Zero Gate Voltage Drain Current Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time IDSS VGS(th) IGSS rDS(on) VDS(on) Cies Coss Crss td(on) td(off) VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=5mA VGS=+/- 10V,VDS=0V VGS=10V, ID=55A VGS=10V, ID=55A VDS=15V, ID=55A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=55A VGS= -5V, +10V
Min.
Typ.
0.36
Max.
Unit m-ohm
FREE WHEELING DIODES RATINGS CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery D.C. IS=110A IS=110A, -dis/dt=100A/µs
Min.
Typ.
0.15
Max.
Unit Unit °C/W
THERMAL CHARACTERISTICS Characteristic Symbol
Thermal Resistance, Junction Case Thermal Resistance, Case Heatsink Rth(j-c) Rth(c-f)
Test Condition
Diode Mounting surface flat, smooth, greased
Min.
Typ.
Max.
0.30
P2HM1102H
108.0
Fig. Typical Output Characteristics
TC=25 250s Pulse Test
Fig. Typical Drain-Source On-Voltage Fig. Gate-Source Voltage
Fig. Typical Drain-Source Voltage Fig. Junction Temperature
DRAIN SOURCE VOLTAGE (on)(V)
TC=25 250s Pulse Test
DRAIN SOURCE VOLTAGE (on)(V)
VGS=10V 250s Pulse Test
DRAIN CURRENT
VGS=10V
ID=110A
ID=110A
DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE
Fig. Typical Capacitance Fig. Drain-Source Voltage
Fig. Typical Gate Charge Fig. Gate-Source Voltage
VGS=0V f=1MHz
Fig. Typical Switching Time Fig. Series Gate impedance
ID=80A
VDD= 125V 200V
ID=55A VDD=48V TC=25 Pulse Test
GATE SOURCE VOLTAGE
CAPACITANCE (nF)
SWITCHING TIME
Ciss
td(off) td(on)
Coss
DRAIN SOURCE VOLTAGE
TOTAL GATE CHRAGE (nC)
0.05
SERIES GATE IMPEDANCE
Fig. Typical Switching Time Fig. Drain Current
Fig. Typical Source-Drain Diode Forward Fig. Characteristics
Fig. Typical Reverse Recovery Characteristics
IS=110A IS=80A Tj=125
1000
RG=5 VDD=48V TC=25 Pulse Test
1000
RG=5 VDD=48V TC=25 Pulse Test
REVERSE RECOVERY TIME (ns) REVERSE CURRENT SWITCHING TIME (ns)
SWITCHING TIME (ns)
td(off) td(on)
td(off) td(on)
DRAIN CURRENT
DRAIN CURRENT
-dis/dt (A/s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) Rth(j-c)]
Fig. Maximum Safe Operating Area
TC=25 Tj=150MAX Single Pulse
Fig. 11-1 Normalized Transient Thermal impedance(MOSFET)
0.05 0.02 0.01
Unit Base Rth(j-c)=0.30/W Shot Pulse
DRAIN CURRENT
100s
Operation this area limited (on)
PULSE DURATION
NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) Rth(j-c)]
10ms
Fig. 11-2 Normalized Transient Thermal impedance(DIODE)
0.05 0.02 0.01
Unit Base Rth(j-c)=2.0/W Shot Pulse
DRAIN SOURCE VOLTAGE
PULSE DURATION

Dual 110A /500V OUTLINE DRAWING P2HM1102H Dimension(mm)

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